PROGRAM

Program Book

Conference Agenda of EDTM 2017

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  • Day.1

    February 28

  • Day.2

    March 1

  • Day.3

    March 2

201+202 (2F)
Tutorial 1: Japanese
Moderator : Akira Toriumi
Nano Imprint
08:30-08:45 Introduction
08:45-09:30 Nano Imprint Shinji Matsui Univ. of Hyogo
09:30-10:15 Anupam Mitra Toshiba
10:15-10:30 Break
Adhesion and Bonding
10:30-11:15 Adhesion and Bonding Katsuhiko Horigome Lintec Corp.
11:15-12:00 Takehito Shimatsu Tohoku Univ.
12:00-13:00 Discussion w/ lunch
Short Course 1: Memory-based Technology
Moderator: Jiro Ida
ReRAM Fundamentals
13:00-14:00 ReRAM Fundamentals Cheol Seong Hwang Seoul National Univ.
Integration of ReRA Mand PCRAM
14:00-15:00 Integration of ReRA Mand PCRAM Daniele Ielmini Politecnico di Milano
15:00-15:15 Break
NVM-based Neuromorphic
15:15-16:15 NVM-based Neuromorphic Hyunsang Hwang Pohang Univ. of Sci. & Tech
NVM-based System
16:15-17:15 NVM-based System Shimeng Yu Arizona State Univ.
17:15-18:00 Break / Session Chair Meeting
18:00-19:00 Reception @ Foyer(3F)(*beverage only)
Interview / Exhibition
203+204 (2F)
Tutorial 2: English
Moderator : Fernando Guarin, GLOBALFOUNDRIES
3D Design and Process
Design for 2.5D- and 3D -Stacked ICs
08:30-08:45 Introduction
08:45-10:15
08:45-09:30 3D Design and Process
Design for 2.5D- and 3D -Stacked ICs		 Paul Franzon North Carolina State Univ.
09:30-10:15
10:15-10:30 Break
3D Design and Process
Overview of Monolithic 3D IC Processing
10:30-12:00
10:30-11:15 3D Design and Process
Overview of Monolithic 3D IC Processing		 Zvi Or-Bach MonolithIC 3DTM Inc.
11:15-12:00
12:00-13:00 Discussion w/ lunch
Short Course 2: Advanced FET Technology
Moderator: Toshihide Nabatame
Advanced CMOS Technology
13:00-14:00 Advanced CMOS Technology Frederic Boeuf STMicroelectronics
Gate Stack Reliability
14:00-15:00 Gate Stack Reliability Klaus-Tibor Grasser Technische Universität Wien
15:00-15:15 Break
Doping and Contact Technology
15:15-16:15 Doping and Contact Technology Kah-Wee Ang National Univ. of Singapore
Characterization-based Yield Engineering
16:15-17:15 Characterization-based Yield Engineering Kazunori Nemoto Hitachi High-Tech
17:15-18:00 Break / Session Chair Meeting
18:00-19:00 Reception @ Foyer(3F)(*beverage only)
Interview / Exhibition
Main Hall (3F)
Plenary
Chairs
S. Ikeda
H. Wakabayashi
08:30-09:00 Plenary
Chairs
S. Ikeda
H. Wakabayashi		 Opening Remarks
09:00-09:40 0166 Dimensions of Innovation to Enable the Next Era of Intelligent Systems
John G. Pellerin GLOBALFOUNDRIES
09:40-10:20 0066 Flexible and Printed OTFT Devices for Emerging Electronic Applications
Shizuo Tokito Yamagata Univ.
10:20-11:00 0165 Advanced Heterogeneous Integration Technology Trend for Cloud and Edge
Douglas Yu TSMC
11:00-11:15 Break
Exhibition Talks
Chairs
K. Ishimaru
R. Arghavani
11:15-12:15 Exhibition Talks
Chairs
K. Ishimaru
R. Arghavani		 TBD
12:15-13:35 Lunch (Poster Displayed)
Emerging: Emerging Technologies
Chairs
B. Zhao
H. Akinaga
13:35-14:00 Emerging: Emerging Technologies
Chairs
B. Zhao
H. Akinaga		 0087 [Invited]Future Computing Devices - Excitation, Physarum, Fluerics, Actin
Adamatzky Andrew Unconventional Computing Centre, University of the West of England
14:00-14:25 0151 [Invited]Neuromorphic Technologies for Next-Generation Cognitive Computing
Robert M. Shelby IBM Research-Almaden
14:25-14:50 0050 [Invited]Stateful logic circuit and material using memristors
Cheol Seong Hwang Seoul National University
14:50-15:15 0039 [Invited]New-paradigm CMOS Ising Computing for Combinatorial Optimization Problems
Masanao Yamaoka Hitachi, Ltd.
15:15-15:40 0095 [Invited]Understanding the Limit and Potential in Emerging Perovskite Solar Cells
Wolfgang Tress Laboratory of Photonics and Interfaces, Swiss Federal Institute of Technology (EPFL)
15:40-15:55 Break
Package: Subsystem Integration & Packaging
Chairs
S. Yamamichi
Y. Kurita
15:55-16:20 Package: Subsystem Integration & Packaging
Chairs
S. Yamamichi
Y. Kurita		 0023 [Invited]System Integration in a Package for Cloud and Edge
Tadahiro Kuroda Keio University
16:20-16:45 0159 [Invited]III-V/Si Low Temperature Direct Bonding Technology for Photonic Device Integration on SOI
Nobuhiko Nishiyama Tokyo Institute of Technology
16:45-17:10 0079 [Invited]Focus technologies in near future from OSAT view point
Akio Katsumata J-DEVICES CORPORATION
17:10-17:35 0139 BGA Packaging process for a Device made by Minimal Fab
Sommawan Khumpuang National Institute of Advanced Industrial Science and Technology (AIST)
17:35-18:00 0077 Electrodeposited Cobalt for Advanced Packaging Applications
Bryan Len Buckalew Lam Research Corporation
18:00-18:25 0148 [Invited]Packaging design considerations for mobile and Internet of things (IOT)
Piyush Gupta Qualcomm
18:25-19:05 Authors Interview / Poster (*w/wine & cheese)
19:05-19:15 Move to Hotel
19:15-21:15 Banquet @ Banquet Room "OHTORI", ANA Crowne Plaza Toyama (3F)
201+202 (2F)
08:30-09:00
09:00-09:40
09:40-10:20
10:20-11:00
11:00-11:15 Break
11:15-12:15
12:15-13:35 12:00-13:00 / Luncheon Seminar (SCIVAX Corporation)
 
Process: Process Technology for Advanced Device
Chairs
J. Yugami
X. Guo
13:35-14:00 Process: Process Technology for Advanced Devices
Chairs
J. Yugami
X. Guo		 0001 [Invited]The Impact of Fin Number on Device Performance and Reliability in Trigate FinFETs
Yeh Wen-Kuan National Nano Device Laboratories
14:00-14:25 0026 Impact of e-SiGe S/D processes on FinFET PFET TDDB Reliability
Rakesh Ranjan GLOBALFOUNDRIES
14:25-14:50 0080 In content dependence of pre-treatment effects on Al2O3/InxGa1-xAs MOS interface properties
Chiaki Yokoyama The University of Tokyo
14:50-15:15 0094 Deep junction by low thermal budget process for advanced Si power electronics
Ines Toque-Tresonne Laser Systems and Solutions of Europe (LASSE) SCREEN Semiconductor Solutions Co. Ltd
15:15-15:40
15:40-15:55 Break
Material: Advanced FEOL Materials
Chairs
I. Muneta
P. Li
15:55-16:20 Material: Advanced FEOL Materials
Chairs
I. Muneta
P. Li		 0120 [Invited]Biocompatible ALD barrier coatings for medical devices
Mikko Matvejeff Picosun
16:20-16:45 0091 [Invited]Enablement of Cost Effective CVD/ALD Processing Through Precursor Design
Jean-Marc Girard Air Liquide Advanced Materials
16:45-17:10 0131 [Invited]Application of Porphyrin based Self Assembled Monolayers in Nano-scale CMOS Processes and Devices
V.Ramgopal Rao Center of Excellence in Nanoelectronics, IIT Bombay
17:10-17:35 0012 Impact of Hydrogen Annealing Behavior of C3H5 Carbon Cluster Ion Implanted Projection Range using Microwave heat treatment
Takeshi Kadono SUMCO Corporation
17:35-18:00 0150 New Opportunity of Ferroelectric Tunnel Junction Memory with Ultrathin HfO2-based Oxides
Xuan Tian The University of Tokyo
18:00-18:25
18:25-19:05 Authors Interview / Poster (*w/wine & cheese)
19:05-19:15 Move to Hotel
19:15-21:15 Banquet @ Banquet Room "OHTORI", ANA Crowne Plaza Toyama (3F)
203+204 (2F)
08:30-09:00
09:00-09:40
09:40-10:20
10:20-11:00
11:00-11:15 Break
11:15-12:15
12:15-13:35 Lunch (Poster Displayed)
Modeling: Reliability Analysis
Chairs
A. Oates
S. Koul
13:35-14:00 Modeling: Reliability Analysis
Chairs
A. Oates
S. Koul		 0160 [Invited]Assessing device reliability margin in scaled CMOS technologies using ring oscillator circuits
Andreas Kerber GLOBALFOUNDRIES
14:00-14:25 0132 The Impact of RTN-induced Temporal Performance Fluctuation against Static Performance Variation
Takashi Matsumoto The University of Tokyo
14:25-14:50 0049 Critical Discussion on Temperature Dependence of BTI in Planar and FinFET devices
Purushothaman Srinivasan GLOBALFOUNDRIES
14:50-15:15 0097 Characterization of critical peak current and model of Cu/low-k interconnects under short pulse-width conditions
Ming-Hsien Lin Taiwan Semiconductor Manufacturing Company, Ltd.
15:15-15:40 0058 NEW ANALYTICAL EQUATIONS FOR SKIN- AND PROXIMITY-EFFECTS IN INTERCONNECTS OPERATED AT HIGH FREQUENCY
Haojun Zhang GLOBALFOUNDRIES
15:40-15:55 Break
Device: Advanced FET Technology
Chairs
J. Ida
N. Horiguchi
15:55-16:20 Device: Advanced FET Technology
Chairs
J. Ida
N. Horiguchi		 0104 [Invited]Analysis of a Dual Material Gate Asymmetric Source Underlap DG-MOSFET in Analog, RF and Circuit Performance
Atanu Kundu Heritage Institute of Technology
16:20-16:45 0109 Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel
Robert J. Mears Atomera Inc
16:45-17:10 0156 [Invited]FinFET/Nanowire Design for 5nm/3nm Technology Nodes: Channel Cladding and Introducing a Bottleneck Shape to Remove Performance Bottleneck
Victor Moroz Synopsys
17:10-17:35 0093 A Computational Study of Fundamentals and Design Considerations for Vertical Tunneling Field-Effect Transistor
Luo Sheng National University of Singapore
17:35-18:00 0145 Analysis of break-even time for nonvolatile SRAM with SOTB technology
Daiki Kitagata Tokyo Institute of Technology
18:00-18:25 0018 Role of Floating Body Effect on Super Steep Subthreshold Slope PN-Body Tied SOI FET
Jiro Ida Kanazawa Institute of Technology
18:25-19:05 Authors Interview / Poster (*w/wine & cheese)
19:05-19:15 Move to Hotel
19:15-21:15 Banquet @ Banquet Room "OHTORI", ANA Crowne Plaza Toyama (3F)
Main Hall (3F)
Process: Innovative Process Tools
Chair
K. Nojiri
Y. Kawasaki
08:30-08:55 Process: Innovative Process Tools
Chair
K. Nojiri
Y. Kawasaki		 0158 [Invited]EUV Lithography insertion for high volume manufacturing: status and outlook
Alek Chen ASML US Inc.
08:55-09:20 0029 Local,Isotropic, and Damageless Doping to Oxide Semiconductors by Using Electrochemistry
Takeaki Yajima The University of Tokyo
09:20-09:45 0137 [Invited]Process Development for CMOS fabrication using Minimal Fab
Sommawan Khumpuang National Institute of Advanced Industrial Science and Technology (AIST)
09:45-10:10 0062 New Compact ECR Plasma Source for Silicon Nitride Film Formation in Minimal Fab System
Tetsuya Goto Tohoku University
10:10-10:25 Break
Material: Advanced BEOL Materials
Chair
S. Kim
10:25-10:50 Material: Advanced BEOL Materials
Chair
S. Kim		 0072 [Invited]Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity Electrolyte and Optimized Additives
Jin Onuki Graduate School of Science and Engineering, Ibaraki University
10:50-11:15 0024 Synthesis of Ru thin films by atomic layer deposition using non-oxidizing reducing reactants; Applications to the seed layer for Cu metallization
Soonyoung Jung Yeungnam University
11:15-11:40 0154 [Invited]Advanced Materials and Interconnect Technologies for Next Generation Smart Devices
Rozalia Beica Dow Electronic Materials
11:40-12:05 0016 [Invited]Proximity Gettering Technology for Advanced CMOS Image Sensors Using C3H5 Carbon Cluster Ion Implantation Techniques
Kazunari Kurita SUMCO CORPORATION
12:05-13:00 Lunch
13:00-14:20 Poster/Exhibition
Modeling:Device Characterization
Chairs
P. Su
D. Navarro
14:20-14:45 Modeling:Device Characterization
Chairs
P. Su
D. Navarro		 0162 [Invited]How Non-ideality Effects Deteriorate the Performance of Tunnel FETs
Andreas Schenk Integrated Systems Laboratory, ETH Zurich
14:45-15:10 0015 Charge Splitting In-situ Recorder (CSIR) for Monitoring Plasma Damage in FinFET BEOL Processes
Ting-Huan Hsieh Microelectronics Laboratory, Institute of Electronics Engineering, National Tsing Hua University
15:10-15:35 0052 Geometric Variation: A Novel Approach to Examine the Surface Roughness and the Line Roughness Effects in Trigate FinFETs
E. R.Hsieh National Chiao Tung University
15:35-16:00 0084 A Novel Method to Characterize DRAM Process Variation by the Analyzing Stochastic Properties of Retention Time Distribution
Min Hee Cho Semiconductor R&D center, Samsung Electronics Co.,
16:00-16:15 Break
Device: Memory Technology
Chairs
M. Saito
K. Tateiwa
16:15-16:40 Device: Memory Technology
Chairs
M. Saito
K. Tateiwa		 0002 Exploiting NbOx Metal-Insulator-Transition Device as Oscillation Neuron for Neuro-Inspired Computing
Shimeng Yu Arizona State University
16:40-17:05 0068 Ohmic Contact Formation Between Ge2Sb2Te5 Phase Change Material and Vertically Aligned Carbon Nanotubes
Panni Wang Hong Kong University of Science and Technology
17:05-17:30 0117 Impact of Current Distribution on RRAM Array with High and Low ION/IOFF Devices
Mohammed Zackriya V National Chiao Tung University
17:30-17:55 0017 3D Time-Contingent Physical Unclonable Function Array on 16nm FinFET Dielectric RRAM
Yi-Hung Chang Microelectronics Laboratory, Institute of Electronics Engineering, National Tsing Hua University
17:55-18:25 Authors Interview (*w/wine & cheese)
18:25-19:25 Networking Session @ Foyer (3F) (*beverage only)
Best Paper Award Ceremony
201+202 (2F)
Device: More-than-Moore Technologies
Chairs
R. Huang
K. Uchida
08:30-08:55 Device: More-than-Moore Technologies
Chairs
R. Huang
K. Uchida		 0013 A Scalable Si-based Micro Thermoelectric Generator
Takanobu Watanabe Waseda University
08:55-09:20 0157 [Invited]Health Monitoring of Houses and Communities by Recording Earthquake Response of Buildings
Minoru Yoshida Hakusan Corp.
09:20-09:45 0085 [Invited]Smart Biosensing Technologies to Detect Single Bacteria and Viruses
Masateru Taniguchi Osaka University
09:45-10:10 0103 Strain-Engineering in Germanium Membranes towards Light Sources on Silicon
Burt Daniel University Of Southampton
10:10-10:25 Break
Device: FET Reliability
Chairs
G. Xiao
O. Cheng
10:25-10:50 Device: FET Reliability
Chairs
G. Xiao
O. Cheng		 0161 [Invited]New Visions for IC Yield Detractor Detection
Bill Nehrer PDF Solutions
10:50-11:15 0099 Comparative Study on RTN Amplitude in Planar and FinFET Devices
Zexuan Zhang Peking University
11:15-11:40 0164 [Invited]A BTI Analysis Tool (BAT) to Simulate p-MOSFET Ageing Under Diverse Experimental Conditions
Souvik Mahapatra Indian Institute of Technology Bombay
11:40-12:05 0031 Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs
Yury Yuryevich Illarionov TU Wien
12:05-13:00 Lunch
13:00-14:20 Poster / Exhibition
Device: Non-conventional Material-based FET Technologies
Chairs
K. Xia
H. Lv
14:20-14:45 Device: Non-conventional Material-based FET Technologies
Chairs
K. Xia
H. Lv		 0128 Analysis of Subthreshold Swing and Internal Voltage Amplification for Hysteresis-Free Negative Capacitance FinFETs
Pin-Chieh Chiu National Central University
14:45-15:10 0027 Design Space Exploration Considering Back-Gate Biasing Effects for Negative-Capacitance Transition-Metal-Dichalcogenide (TMD) Field-Effect Transistors
Wei-Xiang You National Chiao Tung University
15:10-15:35 0065 A simple way to grow large-area single-layer MoS2 film by chemical vapor deposition
Yan-Cong Qiao Tsinghua University
15:35-16:00 0081 High-mobility and H2-anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process
Nobuyoshi Saito Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
16:00-16:15 Break
Process: Process Innovation on Ge Surface and Interface
Chairs
Y. Akasaka
O. Nakatsuka
16:15-16:40 Process: Process Innovation on Ge Surface and Interface
Chairs
Y. Akasaka
O. Nakatsuka 		0022 Surface Preparation and Wet Cleaning for Germanium Surface
Masayuki Otsuji SCREEN Semiconductor Solutions Co.,Ltd.
16:40-17:05 0044 Oxidation Mechanism and Surface Passivation of Germanium by Ozone
Xiaolei Wang Institute of Microelectronics of Chinese Academy of Sciences
17:05-17:30 0096 The impact of atomic layer depositions on high quality Ge/GeO2 interfaces fabricated by rapid thermal annealing in O2 ambient
Laura Zurauskaite KTH Royal Institute of Technology
17:30-17:55 0059 Experimental Investigation on Growth Mechanism of GeOx Layer Formed by Plasma Post Oxidation Based on Angle Resolved X-ray Photoelectron Spectroscopy
Zhiqian Zhao North China University of Technology
17:55-18:25 Authors Interview (*w/wine & cheese)
18:25-19:25 Networking Session @ Foyer (3F) (*beverage only)
Best Paper Award Ceremony
203+204 (2F)
Modeling: Multi Physics Simulation
Chairs
A. Schenk
M. Natarajan
08:30-08:55 Modeling: Multi Physics Simulation
Chairs
A. Schenk
M. Natarajan		 0032 Transient Characterization of Graphene NEMS Switch ESD Protection Structures
Qi Chen University of California, Riverside
08:55-09:20 0155 [Invited]Reliability Modeling of RF MEMS Switches and Phase Shifters for Microwave and Millimeter wave Applications
Shiban K. Koul Centre for Applied Research in Electronics, Indian Institute of Technology
09:20-09:45 0122 [Invited] Multi-scale and Multi-domain Simulation of Electrical Power System
Takayuki Sekisue ANSYS Japan
09:45-10:10  
10:10-10:25 Break
Modeling: Reliability & Modeling
Chairs
S. Huang
M. Miura-Mattausch
10:25-10:50 Modeling: Reliability & Modeling
Chairs
S. Huang
M. Miura-Mattausch		 0076 [Invited]ESD Performance Enhancement Methodologies for CMOS Power Transistors
Mahadeva Iyer Natarajan GLOBALFOUNDRIES Inc
10:50-11:15 0056 Aging Simulation of SiC-MOSFET in DC-AC Converter
Kenshiro Sato Graduate School of Advanced Sciences of Matter, Hiroshima University
11:15-11:40 0114 Degradation Caused by Negative Bias Temperature Instability Depending on Body Bias on NMOS or PMOS in 65 nm Bulk and Thin-BOX FDSOI Processes
Ryo Kishida Kyoto Institute of Technology
11:40-12:05 0004 JFETIDG: A Compact Model for Independent Dual-Gate JFETs
Kejun Xia NXP Semiconductors
12:05-13:00 Lunch
13:00-14:20 Poster / Exhibition
Process: Process Innovation in MEMS and Sensors
Chairs
S. Tanaka
M. Miura
14:20-14:45 Process: Process Innovation in MEMS and Sensors
Chairs
S. Tanaka
M. Miura		 0163 [Invited]Growing Market of MEMS and Technology Development in Process and Tools Specialized to MEMS
Hiroshi Yanazawa MEM-CORE Co. Ltd.
14:45-15:10 0045 Development of MEMS Vibrating Sensor with Phase-Shifted Optical Pulse Interferometry
Yusaku Ohe Tokyo Institute of Technology
15:10-15:35 0153 Microstructuring Polydimethylsiloxane Elastomer Film with 3D Printed Mold for Low Cost and High Sensitivity Flexible Capacitive Pressure Sensor
Xiaojun Guo Shanghai Jiao Tong University
15:35-16:00 0138 Effective Performance of a Tiny-chamber Plasma Etcher in Scallop Reduction
Sommawan Khumpuang National Institute of Advanced Industrial Science and Technology (AIST)
16:00-16:15 Break
16:15-16:40
16:40-17:05
17:05-17:30
17:30-17:55
17:55-18:25 Authors Interview (*w/wine & cheese)
18:25-19:25 Networking Session @ Foyer (3F) (*beverage only)
Best Paper Award Ceremony