| Stress free heteroepitaxial thin films of PZT-based ternary perovskite, xPb(Mn,Nb)O3-(1-x)PZT, were fabricated by magnetron sputtering on (001)MgO substrates and evaluated their crystal structure, ferroelectric and piezoelectric properties. The heteroepitaxial thin films showed single c-domain /single crystal structure and exhibit hard ferroelectric behavior with large Pr, Pr=60ƒÝC/cm2 , and high Ec, 2Ec=230kV/cm, at x=0.06. The PZT-based thin films exhibited high piezoelectric coupling factors kt, kt=70%, measured at GHz range FBAR structure. High values of mechanical quality factor Qm, Qm=185, were observed at 4Ghz range. The observed kt and Qm are, to our knowledge, the highest in the reported values. The figure of merit kt2Qm is almost the same to piezoelectric AlN thin films. It is confirmed the PZT-based ternary perovskite thin films have a potential for a fabrication of FBAR and/or wide band filters at GHz range. |