| We have successfully fabricated 5GHz band FBAR using aluminium nitride (AlN) film by metal organic chemical vapor deposition (MOCVD) method on SiO2/Si substrate. However, large spurious existed between resonant frequency and anti-resonant frequency on admittance characteristics of prototype FBAR. We analyzed spurious vibration mechanism using three-dimensional (3-D) simulation. Spurious vibration mode was longitudinal thickness mode by simulation results. Therefore, we completely suppressed the spurious vibration by designing film thickness. |