| Film bulk acoustic resonator (FBAR) was fabricated using AlN(0002) film. We achieved the high oriented AlN(0002) film through the metal-organic chemical vapor deposition (MOCVD) method on Ru/Ta bottom electrode. But thermal stress of AlN film was a problem in the high temperature MOCVD process over 1000°C. To reduce the thermal stress of AlN film, the low temperature AlN film growth was needed. We investigated the influence of H2 and N2 carrier gas in the MOCVD process to the AlN film quality. The full width at half maximum (FWHM) of the AlN(0002) using the N2 carrier gas was better than that of the H2 gas at the low temperature. Then the AlN cracks was reduced by the low temperature AlN growth. Furthermore, the FWHM of AlN(0002) using H2 and N2 gases at the MOCVD method were excellent value of under 1.5° at less than 0.5μm thickness. |