4A-6. PZT Piezoelectric Thick Film with Enhanced Electrical Properties for High Frequency Ultrasonic Transducer Applications

Piezoelectric Pb(Zr0.52Ti0.48)O3 thick film with the thickness around 10 µm has been deposited on the (111) Pt/Ti/SiO2/Si substrate using a ceramic power/sol-gel solution modified composite method. X-ray diffraction analysis and scanning electron microscope revealed that the film was in the well-crystallized perovskite phase and cracked free. At 1 KHz, The dielectric constant and the loss were 1925 and 0.015, respectively. The remnant polarization was 42.0µC/cm2 at room temperature. A high frequency single element acoustic transducer fabricated with this film showed a bandwidth at -6 dB of 50% at 156 MHz.