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May 18, 2016

High Frequency Characterization of Transistors

by Editor @ 1:19 pm. Filed under ALL, Electrical/Power, Electronics Design, Microwave, Semiconductors, Signal Processing
 

Tuesday, June 14, 2016
SCV Electron Device Society (EDS)
Subject: High Frequency Characterization of Transistors
– extract Ft and Fmax from S-parameters, Smith Chart, Maximum Available Gain (MAG), Maximum Stable Gain (MSG) and Masonâ??s Unilateral Gain (U), Vector Network Analyzer, Calibration methods …
Speaker: Dr. Jayasimha Prasad, Foveon Inc.
Time: 6:00 pm: Networking and Refreshments; 6:15 pm to 7:00 pm: Presentation
Cost: Free
Location: Texas Instruments Building E Conference Center, 2900 Semiconductor Dr., Santa Clara
Event Details: http://sites.ieee.org/scv-eds/

20150614ALL

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