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June 19, 2009

Mtg: Magnetic RAM (MRAM): A New Spin

by @ 1:53 pm. Filed under ALL, Computers/Software, Electrical/Power, Electronics Design, NanoEngineering, Semiconductors
 

TUESDAY June 23, 2009
SCV Magnetics Chapter?
Speaker: Prof. Jian-Gang (Jimmy) Zhu, Data Storage Systems Center, Carnegie Mellon University
Time: Cookies, Conversation & Pizza at 7:00 PM, Presentation at 7:30 PM
Cost: none
Place: Western Digital, 1710 Automation Parkway, San Jose
RSVP: not required
Web: www.ewh.ieee.org/r6/scv/mag

Although dubbed as the future universal memory, magnetoresistive random access memory (MRAM) has had limited commercial success, partly because the field-driven magnetic state switching requires relatively high power consumption.? New designs utilizing spin transfer torque (STT) might greatly expand storage capacity since the required power for switching a single bit is substantially reduced.
STT-MRAM with perpendicular magnetic electrodes is particularly promising since it could provide critically needed scalability such that a single memory chip could be capable of storing billions of bits..? The talk will provide an in-depth review on the development path of MRAM technology over the past decade and a prospective of the near future.

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