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January 25, 2010

Mtg: Heusler Compounds: Multifunctional Materials for Spintronics

by @ 9:19 am. Filed under ALL, Electronics Design, NanoEngineering, Optics/Displays
 

WEDNESDAY February 10, 2010
OEB Magnetics Chapter
Speaker: Prof. Claudia Felser, University Mainz, Germany
Time: Presentation at 3:00 PM
Cost: none
Place: Lawrence Berkeley National Laboratory, Berkeley
RSVP: Please respond by email with name, company, to Peter Fischer, PJFischer@lbl.gov by February 6
Web: ewh.ieee.org/r6/oeb/mag

The development of magnetic Heusler compounds specifically designed as materials for spintronic applications has made tremendous progress in the very recent past.? Many problems in the field of spintronics still lack good solutions. The concept of half-metallic Heusler compounds provides a perspective for novel solutions.? Heusler compounds can be designed and made with high spin polarization and high Curie temperature, as well as, depending on the application, high spin injection efficiency, very low or high damping, tunable magnetic moment (low and high magnetic moment can be realized), and tunable anisotropy.? Thus, there is very high potential that many material-related problems, present in current-day 3d metal systems, can be overcome.? A big challenge is still the handling of interfaces with respect to their chemical (atomic diffusion and roughness), electronic (e.g., Schottky barrier design) and spin properties (spin injection and spin pumping).? In addition, potential for new phenomena and applications exists, using novel materials in the Heusler compound family, to name here novel semi-conducting Heusler compounds to be used as non-ferromagnetic spin conductors.
High spin polarisation and high Curie temperatures were found in Co2-Heusler compounds with values up to 1120 K in Co2FeSi. Mn2YZ compounds such as Mn3Ga are ferrimagnets with low magnetic moments despite their high Curie temperatures.? Due to the Jahn Teller instability of manganese in these materials, some of them show a tetragonal distortion, which renders out-of-plane magnetisation in thin films possible.? However, also the semiconducting half-Heusler compounds show promising properties.? Half-Heusler compounds such as TiNiSn have attracted attention as potential candidates for thermoelectric applications.? These complex C1b compounds can be designed as n- and p-type thermoelectrical materials with exceptionally large figure of merit, ZT ~1.5 at high temperatures.
The potential for application of these ternary compounds as multifunctional materials on a basis of a rational design will be discussed.

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