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September 28, 2010

Mtg: Advances in Helium Ion Microscope Imaging, Materials Analysis and Nanofabrication

by @ 9:26 am. Filed under ALL, BioEngineering, Engineering Mgmt, NanoEngineering, Optics/Displays, Semiconductors

TUESDAY October 19, 2010
SCV Nanotechnology Chapter
Speaker: Bill Thompson, Carl Zeiss SMT
Time: Registration & light lunch 11:30 AM; Presentation at 12:00 PM
Cost: IEEE Members and Students: $5; Non-Members: $10
Place: National Semiconductor Bldg E-1 CMA Room. 2900 Semiconductor Drive, Santa Clara,
RSVP: from the website

The helium ion microscope is currently capable of 0.35 nm resolution. This resolution is derived from a unique high brightness ion source comprised of helium ions launched from a single atom of a metal needle. The helium ion microscope (HIM) can be operated in two main imaging modes; ion induced secondary electron (SE) mode and Rutherfordbackscatter imaging (RBI) mode. A helium ion microscope SE mode image differs from an SEM SE image in that it provides sub-nanometer, surface sensitive resolution, on both conductive and insulating samples without the need for a conductive coating.
In addition to imaging, the helium ion microscope has been used to expose ultra small dots and lines in resist and to pattern free standing graphene sheets. With the incorporation of a gas injection system (GIS) the HIM has deposited tungsten pillars 30 nmâ??s in diameter and 6000nmâ??s high.
Bill will provide a system and applications update and explore the implications of the ultra high resolution imaging, analysis and patterning capabilities of the HIM technology.

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