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January 26, 2011

Mtg: Ultrafast Nanoscale Electrothermal Energy Conversion Devices and Measurements

by @ 4:52 pm. Filed under ALL, Electrical/Power, Electronics Design, Semiconductors

WEDNESDAY February 16, 2011
SCV Power Electronics Chapter
Speaker: Ali Shakouri, Baskin School of Engineering, University of California Santa Cruz
Time: Networking & Pizza at 6:00 PM; Presentation at 6:30 PM
Cost: Donation for food
Place: National Semiconductor, Building E Auditorium, 2900 Semiconductor Drive, Santa Clara
RSVP: from the website

Energy consumption in our society is increasing rapidly.? A significant fraction of the energy is lost in the form of heat.? In this talk we introduce thermoelectric devices that allow direct conversion of heat into electricity.? Novel metal-semiconductor nanocomposites are developed where the heat and charge transport are modified at the atomic level.? Theory and experiment are compared for the case of embedded ErAs nanoparticles in a InGaAlAs semiconductor matrix.? Potential to increase the energy conversion efficiency and bring the cost down to $0.1-0.2/W will be discussed.? We also describe how similar principles can be used to make micro refrigerators on a chip with cooling power densities exceeding 500 watts per centimeter square.? Finally, we describe some recent advances in nanoscale thermal characterization and modeling. Thermo-reflectance imaging is used to measure the transient temperature distribution in LDMOS power transistors at different ambient temperatures.? Resolution down to 100ns in time, submicron spatial and 0.1C in temperature are achieved using megapixel CCDs.? It is possible to measure both the temperature on top of the metal interconnect as well as at the transistors using near infrared illumination through the substrate.? Recent results in transient thermal imaging of ESD protection devices, submicron interconnect vias, solar cells and LEDs are also briefly presented.? Finally, in analogy with image blurring, a new technique is developed to estimate the temperature profile in integrated circuit chips with calculation speeds hundreds of times faster than the standard finite element methods.

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