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July 27, 2011

Mtg: Silicon Carbide (SiC) Sensing Technology for Extreme Harsh Environments

by @ 6:21 pm. Filed under ALL, Electrical/Power, Electronics Design, Semiconductors
 

WEDNESDAY October 12, 2011
SCV Components, Packaging and Manufacturing Technology Chapter
Speaker: Debbie G. Senesky, Ph.D., University of California, Berkeley
Time: Optional buffet dinner at 6:00 PM; Presentation (no charge) at 6:45 PM
Cost: $20 per person; $10 for fulltime students and currently unemployed engineers; $5 more at the door
Place: Biltmore Hotel, 2151 Laurelwood Rd (Fwy 101 at Montague Expressway), Santa Clara
RSVP: from website
Info: www.cpmt.org/scv/meetings/cpmt1110.html

This presentation discusses advances in SiC manufacturing technology including growth of amorphous SiC thin films, polycrystalline SiC thin films and high-temperature metallization.? Results of fabricating micro-scale SiC sensors and operating SiC sensors within high temperature (600oC), dry steam and high shock environments are presented.
Harsh environment sensors can be used to perform real-time, in-situ combustion monitoring leading to designs of power and propulsion systems (e.g. industrial gas turbines, and aircraft engines) with increased efficiencies, fuel flexibility and reduced CO2 emissions.? Space exploration can be extended with high temperature, radiation-hardened materials, instrumentation and energy conversion devices using Silicon carbide (SiC), a ceramic, semiconductor material that is stable in high temperature, high radiation and chemically corrosive environments.

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