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January 25, 2008

Mtg: The Spin on Electronics! Spin-valves and Magnetic Tunneling Junctions

by @ 8:50 am. Filed under ALL, Communications, Computers/Software, Electronics Design, Engineering Mgmt, NanoEngineering, Semiconductors

TUESDAY January 29
SCV Magnetics Chapter
Speaker: Stuart Parkin, IBM Almaden Research Center, and 2008 IEEE Magnetics Society Distinguished Lecturer
Time: Cookies & Conversation at 7:30 PM, Presentation at 8:00 PM
Cost: none
Place: WDC (formerly Komag), 1710 Automation Parkway, San Jose
RSVP: not required

Today, nearly all microelectronic devices are based on storing or flowing the electronâ??s charge. ? The electron also possesses a quantum mechanical property termed “spin”, that gives rise to magnetism. Electrical current is comprised of “spin-up” and “spin-down” electrons, which behave as largely independent spin currents. ? The flow of these spin currents can be controlled in thin-film structures composed of atomically thin layers of conducting magnetic materials separated by non-magnetic conducting or insulating layers. ? The resistance of such devices, so-called spin-valves and magnetic tunneling junctions, respectively, can be varied by controlling the relative magnetic orientation of the magnetic layers, giving rise to magnetoresistance tailored for different applications. ? Recent advances in generating, manipulating and detecting spin-polarized electrons and electrical current make possible new classes of spin based sensor, memory and logic devices, generally referred to as the field of spintronics. ? In particular, the spin-valve is a key component of all magnetic hard-disk drives manufactured today and enabled their nearly 1,000-fold increase in capacity over the past eight years. The magnetic tunnel junction allows for a novel, high performance random access solid state memory which maintains its memory in the absence of electrical power. ? The respective strengths of these two major classes of digital data storage devices, namely the very low cost of disk drives and the high performance and reliability of solid state memories, may be combined in the future into a single spintronic memory-storage technology, the magnetic Racetrack. ? The Racetrack is a novel three dimensional technology which uses nanosecond long pulses of spin polarized current to move a series of magnetic domain walls along magnetic nanowires.

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