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January 30, 2008

Mtg: Atomic Scale Modeling of Electron Transport in MRAM

by @ 12:28 pm. Filed under ALL, Computers/Software, Electronics Design, Engineering Mgmt, NanoEngineering, Semiconductors
 

TUESDAY March 18
SCV Nanotechnology Chapter
Speaker: Dr. Dimitri Novikov, CTO, Atomistix, Inc.
Time: Registration & light lunch 11:30 AM, Presentation at Noon
Cost: IEEE Members and Students $5, Non-Members $10
Place: National Semiconductor, Bldg E-1 CMA Room, 2900 Semiconductor Drive, Santa Clara
RSVP: from the website
Web: www.ieee.org/nano

Atomic-scale modeling is becoming an important step in the process of designing novel advanced electronic devices, especially at the nanoscale size. Modeling R&D efforts are growing much faster than experimental research. ? One of the most prominent areas is the modeling of Tunneling Magnetoresistance, which is important to the production of magnetoresistive random-access memory (MRAM) and read sensors for hard drives. We will present results on atomic-scale modeling, using Atomistixâ??s atomic scale modeling platform, of transport properties of Fe/Mg/Fe, Co/MgO/Co and FeCo/MgO/FeCo tunnel junctions at zero bias. ? We will show how these properties depend on the thickness of the MgO layer as well as the chemical composition of the interface layer in the case of FeCo, and compare these to published experimental results.


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