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December 5, 2011

Mtg: Integration of Disruptive Materials for Advanced Non-Volatile Memories

by @ 3:38 pm. Filed under ALL, Communications, Computers/Software, Electronics Design, NanoEngineering, Semiconductors
 

TUESDAY December 20, 2011
SCV Nanotechnology Chapter
Speaker: Wilbur Catabay, Vice President of Technology and Engineering, SVTC
Time: Registration & light lunch 11:30 AM; Presentation at 12:00 Noon
Cost: $5 for IEEE Members and Students; $10 for Non-Members
Place: TI Auditorium, Bldg E-1 CMA Room, 2900 Semiconductor Drive, Santa Clara
RSVP: from website
Web: www.ieee.org/nano

Over the past few years, there have been stories of leading NVM device manufacturers that discuss the end of the NAND Flash era. Although they continue to innovate by scaling the geometries below 20nm device features, other development work in the labs and entrepreneurial startups have come into play with disruptive and innovative technologies for Non Volatile Memory. SVTC will give an overview of how we enable these disruptive NVM technologies by way of novel materials and integration with CMOS platforms.

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