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February 21, 2012

Mtg: Overview of Radiation Sources for Extreme Ultraviolet Lithography

by @ 4:25 pm. Filed under ALL, Engineering Mgmt, Optics/Displays, Semiconductors
 

TUESDAY March 6, 2012
SCV Photonics Chapter
Speaker: Dr. Oleg Khodykin, KLA-Tencor
Time: Networking/Light Dinner at 6:00 PM; Presentation at 7:00 PM
Cost: none
Place: Keypoint Credit Union, 2805 Bowers Ave, Santa Clara
RSVP: from website
Web: ewh.ieee.org/r6/scv/leos

Next-generation lithography has become more difficult with each succeeding dimensional shrink, and a transition to a shorter excitation wavelength, using an extreme ultraviolet (EUV) source is overdue.? Unfortunately, the source remains the primary bottleneck; a minimum of 100W will be needed, with 250W for high volume production, to obtain the customary tool throughput.? To date, only 30W of source power has been reported.? Our speaker will discuss the two main types of EUV sources: one using laser excitation of a metal droplet to form a plasma (LPP), the other using an arc that vaporizes a plasma by a high energy electrical discharge (DPP) or related approaches.? He will discuss the shortcomings of each approach.? Then he will discuss the laser excitation source in more detail, and go into the engineering problems that need solved to increase the power, increase the system uptime, and bring the source into production.

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