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May 21, 2012

Mtg: A Unified Compact Model for Generic Heterostructure HEMTs

by @ 8:03 am. Filed under ALL, Electronics Design, Semiconductors
 

MONDAY June 18, 2012
SCV Electron Devices Chapter
Speaker: Dr. Xing Zhou, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore
Time: Pizza and networking at 6:00 PM, Presentation at 6:15 PM
Cost: none
Place: Texas Instruments Building E Conference Center, 2900 Semiconductor Dr. Santa Clara
RSVP: not required
Web: www.ewh.ieee.org/r6/scv/eds

III-V channel field-effect transistors (FETs), such as GaN-based high electron mobility transistors (HMETs), have emerged as promising candidates for future generation high-speed, high-frequency, high-voltage, and high-power ULSI applications.? This talk presents a unified compact model for generic heterostructure HMETs.? It is based on unified regional modeling (URM) of the 2-dimensional electron gas (2DEG) charge density, including the two lowest subbands of the triangular well in the active region, and extending to the subthreshold region of operation in a single-piece formulation.? The 2DEG charge density model is adopted in the surface-potential based URM (Xsim) for bulk/multigate MOSFETs.? The developed model has been validated with the exact numerical solutions for a wide range of devices and verified with experimental data of metal-insulator-semiconductor (MIS) HEMT devices.

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