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November 8, 2012

Mtg: Atomistic Aspects of the Resistive Switching Characteristics in RRAM Devices

by @ 12:23 pm. Filed under ALL, Electronics Design, NanoEngineering, Optics/Displays, Semiconductors
 

TUESDAY December 4, 2012
SCV Nanotechnology Chapter
Speaker: Dr. Blanka Magyari-Kope, Stanford University
Time: Registration & light lunch at 11:30 AM; Presentation at 12:00 PM noon
Cost: IEEE Members and Students $5; Non-Members $10
Place: Texas Instruments Bldg E-1 CMA Room, 2900 Semiconductor Drive, Santa Clara
RSVP: from website
Web: sites.ieee.org/sfbanano

Recently, numerous experimental and theoretical investigations have been undertaken in academia as well as various product-oriented efforts are going on in industry for resistives witching memory.? The rapid rise in publications for RRAM have mostly dealt with resistive switching mechanism, electronic conduction mechanisms for both â??ON??? and â??OFF??? state, formation and annihilation of conductive paths, and addressing scalability, retention and endurance issues.? Perhaps still the major â??unknown??? is how we can reach clearer understanding of the resistive switching mechanism by a rigorous physics-based modeling which can serve for materials and structural optimization of RRAM cell, followed by selection devices and memory array configurations.? This talk will discuss (1) progress made for switching mechanisms for resistive switching in terms of â??ON??? and â??OFF??? state formation energies, which has implications to switching power scaling coupled with retention characteristics, (2) physical mechanism of the â??ON??? conduction by using ab-initio simulation techniques which delineate the role of oxygen vacancies in forming a conductive filament in transition metal oxides, and (3) investigation of various metal electrodes and dopants effects, to assess the scalability and endurance in terms of programming power reduction as well as variability improvement and retention characteristics.

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