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June 29, 2013

Mtg: Memristive Devices for Computing

by @ 8:28 am. Filed under ALL, Computers/Software, NanoEngineering, Semiconductors
 

TUESDAY July 9, 2013
SCV Electron Devices Chapter
Speaker: Dr. J. Joshua Yang, Hewlett Packard Laboratories
Time: Networking and pizza at 6:00 PM; Presentation at 6:15 PM
Cost: None
Place: Texas Instruments Building E Conference Center, 2900 Semiconductor Drive, Santa Clara
RSVP: not required
Web: www.ewh.ieee.org/r6/scv/eds

Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices is two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application.  I will first describe the switching mechanisms of metal-oxide switches and a related family of nanodevices, along with their potential applications. Then the promises and challenges with respect to using these devices will be discussed together with some possible solutions.

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