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September 26, 2013

Mtg: Conducting Atomic Force Microscopy (C-AFM) at Statistically Relevant Scale for Rapid Assessment of Non-Volatile Memory Materials and Devices

by @ 7:45 am. Filed under ALL, NanoEngineering, Optics/Displays, Semiconductors
 

TUESDAY October 15, 2013
SCV Nanotechnology Chapter
Speaker: Dr. Kumar Virwani, Research Staff Member, IBM Almaden Research Center
Time: Networking and light lunch at 11:30 AM; Presentation at 12:00 Noon
Cost: IEEE Members: $5; Non-members: $10
Place: TI Auditorium E-1, 2900 Semiconductor Drive. Santa Clara
RSVP: from website
Web: sites.ieee.org/sfbanano

Over the past few years we have investigated applications of Mixed-Ionic-Electronic–Conduction (MIEC) materials as access devices for various non-volatile memory candidates, including Resistive RAM (RRAM).  In this talk we describe the role of conducting atomic force microscopy in the discovery of new mixed ionic electronic conductors, and in the optimization and monitoring of fabrication processes for both MIEC and RRAM devices.
C-AFM measurements on MIEC and RRAM devices yield fast, reliable and statistically relevant information that can be applied towards the optimization of materials, electrodes, anneal conditions and a host of other parameters relevant for ultimate device performance.  From an instrumentation perspective, we show how thousands of I-V (current vs. voltage) measurements can be both repeatable and reliable.  We describe how to overcome C-AFM challenges such as set-up inconsistency, non-repeatable I-V performance, probe life and lack of large statistics.
Establishment of short-loop fabrication procedures allow devices to be delivered for C-AFM testing rapidly, allowing quick turnaround in the assessment of myriad processing choices.  Yet by validating an exact subset of the full fabrication procedure needed for fully integrated devices, such short-loop devices also provide for maximal efficiency in yield learning.  One-to-one correlations between data from automated probe testing and C-AFM measurements, and unique fabrication knowledge and extensive device scaling data obtained via C-AFM will be presented.

131015

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