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November 17, 2013

Mtg: Tuning Magnetic Anisotropy in (001)-Oriented L10 (Fe1-xCux)55Pt45 Films

by @ 6:56 am. Filed under ALL, Electronics Design, NanoEngineering
 

TUESDAY November 19, 2013
SCV Magnetics Chapter
Speaker: Dustin A. Gilbert, Physics Department, University of California, Davis
Time: Networking and pizza at 6:45 PM, Presentation at 7:30 PM
Cost: none
Place: Western Digital, 1710 Automation Parkway, San Jose
RSVP: not required
Web: ewh.ieee.org/r6/scv/mag

The development of high anisotropy magnetic materials that are compatible with industrial processing is critical in advancing magnetic recording, permanent magnet, and spintronic technologies.  Specifically, high anisotropy materials are necessary to ensure long-term thermal stability in magnetic nanoelements, such as ultra-high density recording media and magnetic memory.  A material of particular interest is L10 ordered FePt because of its large magneto-crystalline anisotropy, saturation magnetization, and chemical stability.  A key limiting factor has been the high annealing temperature necessary to transform the as-deposited disordered face centered cubic (FCC) A1 phase into the ordered tetragonal L10 phase.
We have achieved (001) oriented L10 (Fe1-x Cux)55Pt45 thin films, with magnetic anisotropy up to 3.6�107 erg/cm3, using atomic-scale multilayer sputtering and post annealing at 400 °C for 10 seconds, which is a much lower temperature annealing for a much shorter time compared to earlier studies.  By fixing the Pt concentration, structure and magnetic properties are systematically tuned by the Cu addition.  Increasing Cu content results in an increase in the tetragonal distortion of the L10 phase, significantly changing the film microstructure and lowering of the saturation magnetization and anisotropy.  The relatively convenient synthesis conditions, along with the tunable magnetic properties, make such materials highly desirable for future magnetic recording technologies.
This work has been supported by the NSF (DMR-1008791). Work at NTHU has been supported in part by Hsinchu Science Park of Republic of China under Grant No. 101A16.

20131119scv

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