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December 3, 2013

Mtg: Development of Graphene-based RF Integrated Circuits

by @ 2:00 pm. Filed under ALL, Electronics Design, NanoEngineering, Semiconductors
 

THURSDAY December 12, 2013
SCV Solid State Circuits Chapter, with Circuits and Systems
Speaker: Alberto Valdes-Garcia, RF Circuits and Systems Group, IBM T. J. Watson Research Center
Time: Networking and snacks at 6:30 PM; Presentation at 7:00 PM
Cost: none
Place: QualComm, 3165 Kifer Road, Santa Clara
RSVP: from website
Web: sites.ieee.org/scv-sscs

Graphene is a two-dimensional (2D) material, consisting of a sheet of carbon atoms arranged in a honeycomb lattice, and possesses exciting potential for high frequency electronics due to its high intrinsic carrier mobility (> 10,000 cm2/Vs at room temperature) and large saturation velocity (~ 5.5×107 cm/s), both of which greatly exceed the corresponding values in silicon.  The potential of any new material to make a significant impact into the modern world of microelectronics is contingent on its ability to achieve scalable integration into practical circuits.  After the successful demonstration of graphene devices with cut-off frequencies in the GHz-range, the next major step to move graphene technology forward into the practical domain of RF electronics is to address the challenges associated with circuit integration.  This presentation summarizes the recent development and characterization of graphene-based RF devices and integrated circuits.  The first wafer-scale process developed for graphene RFIC integration on SiC wafers is discussed along with the design and measurements of a 5-GHz down-conversion mixer.  Next, a frequency doubler fabricated on CVD graphene is presented as a proof-of-concept of graphene-based circuits in a 200mm platform.  Finally, some of the special properties if these ICs (such as their low sensitivity to temperature variations), and the remaining challenges for graphene RFIC technology will be discussed.

20131212scv

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