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December 11, 2013

Mtg: Conductive-Bridge Memory (CBRAM): High-temperature Retention and Tolerance to Gamma Radiation

by @ 8:28 pm. Filed under ALL, Computers/Software, Electronics Design, NanoEngineering, Semiconductors

TUESDAY December 17, 2013
SCV Nanotechnology Chapter
Speaker: Dr. Venkatesh P. Gopinath, V.P. of CBRAM Technology, Adesto Technologies
Time: Networking and pizza at 11:30 AM; Presentation at 12:00 PM Noon
Cost: IEEE Members $5; Non-members $10
Place: TI Auditorium E-1, 2900 Semiconductor Drive, Santa Clara
RSVP: from website

Development activities in resistive memories have undergone explosive growth in the past several years.  Conductive-Bridge RAM (CBRAM) is a family of resistive memory that offers significant advantages of performance, cost, scaling and power as compared to todayâ??s non-volatile memory technologies.  While several implementations of RRAM technology have demonstrated excellent potential as next generation memory technology, the barriers to achieve commercial success remain rooted in overcoming process integration challenges as well as market and application requirements.  Further, reliability and functional requirements for memory products vary depending on the end application for which they will be utilized.
This talk will focus on a family of fully CMOS integrated CBRAM technology that not only shows excellent performance and power advantages over todayâ??s technologies but also demonstrates excellent high temperature (>200ºC) retention and tolerance to very high levels (5Mrad) of Gamma radiation.  These features allow CBRAM to replace conventional NVM technology for traditional applications as well as solutions for operations under harsh operating conditions like automotive, medical (sterilization) and space applications.


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