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May 28, 2014

Mtg: Sub-4nm Patterning Using Helium Ion Beam and Nanoimprint Lithography

by @ 11:17 am. Filed under ALL, NanoEngineering, Optics/Displays, Semiconductors
 

TUESDAY June 10, 2014
SCV Nanotechnology Chapter
– resolution, molds, line-edge roughness …
Speaker: Prof. Wei Wu, Department of EE, University of Southern California
Time: Networking/Refreshments at 11:30 AM; presentation at 12:00 PM
Cost: $5 for IEEE members; $10 for non-members
Place: Texas Instruments (TI) Auditorium E-1, 2900 Semiconductor Drive, Santa Clara
RSVP: from website
Web: sites.ieee.org/sfbanano

Helium ion beam lithography (HIBL) is a recently developed nanolithography technology. It uses a He ion beam to direct write patterns in the same fashion as electron beam lithography (EBL).  Due to its advantages, such as smaller focusing spot and less proximity effects than electron beam, it can go beyond the resolution of EBL. We have demonstrated patterning of various nano-patterns using HIBL.  For example, we achieved dense lines with half-pitch down to 4 nm. Moreover, we also achieved sub-5 nm patterning using nanoimprint lithography (NIL) with molds fabricated by HIBL.  The combination of NIL and HIBL mitigates the two major drawbacks of HIBL: low throughput and the tendency to damage substrates.  We also used HIBL as a direct milling tool to pattern metal and Graphene with dense lines down to 4 nm half-pitch.  Our Raman spectra show that the HIBL patterned Graphene nanoribbons (GNRs) have lower line-edge roughness than reported GNRs patterned by EBL.

20140610scv

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