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July 23, 2014

Mtg: Mesoscopic Devices and their Impact on Product Yield: The Next Technological Challenge

by @ 1:11 pm. Filed under ALL, NanoEngineering, Semiconductors
 

TUESDAY July 29, 2014
SCV Electron Devices Chapter
– mass replication, fluctuations, bottom-up, point doping …
Speaker: Dr. Renuka P. Jindal, IEEE Fellow, University of Louisiana at Lafayette
Time: Networking, Pizza at 6:00 PM; Presentation at 6:15 PM
Cost: none
Place: TI Auditorium E-1, 2900 Semiconductor Drive. Santa Clara
RSVP: from website
Web: www.ewh.ieee.org/r6/scv/eds

The bastion of the successful electronics revolution over the last 67 years is its unchallenged capability of mass replication churning out millions of highly integrated, IDENTICAL low-cost units supporting this multi-trillion dollar industry.  Due to continued miniaturization, as device functionality now hovers over tens of atomic spacing, devices and circuits fabricated using identical processes placed next to each other on the wafer now exhibit noticeably different characteristics.  This upsetting trend is emerging due to two underlying sources of extrinsic and intrinsic fluctuations.  To overcome the extrinsic fluctuations manifested by the top-down device fabrication challenges, the bottom-up approach akin to growth in living organisms holds promise.  However, there is no obvious path to circumvent the intrinsic fluctuations due to the graininess of matter itself.  The concept of average doping, device length, width, and thickness must be replaced by point doping with jagged dimensions and compositional variations with attendant variability of electrical and optical parameters.  Device modeling must make a transition from continuous to atomistic simulations.  Due to the failure of the central limit theorem, experiment-based statistical device and circuit models coupled with innovative design techniques will be needed.  Exceptions to this general trend exist where small dimensions result in less noisy signal amplification.  Such concepts hold promise for leveraging finite dimensions of future devices.

20140729scv

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