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July 26, 2014

Mtg: A New Nonvolatile Memory Technology – Persistence Pays Off

by @ 4:01 pm. Filed under ALL, Communications, Computers/Software, Electronics Design, Engineering Mgmt, NanoEngineering, Semiconductors
 

TUESDAY September 9, 2014
SCV Computer Chapter
– S/DRAM, MRAM, redundancy, trends …
Speaker: Edward Grochowski, Computer Memory and Storage Consultant
Time: Networking and Refreshments at 6:30 PM; Presentation at 7:00 PM
Cost: none
Place: Cadence Bldg 10, 2655 Seely Ave, San Jose, and live over the internet
RSVP: from website
Web: computer.ieeesiliconvalley.org

The application of a spin torque tunneling technology to MRAM devices has opened new opportunities for higher density circuits which may be very competitive with DRAM as well as SRAM.  STT RAM devices have the potential of significantly reducing SOC dimensions while maintaining similar functionality and storage capacity.  By converging the functions of DRAM, FLASH, ROM and SRAM this non volatile technology can provide a new generation of high density circuits which will simplify system architecture and enhance performance.  It could be possible to enhance the STT RAM technology to provide a multi-bit device ideal for high-density and low-cost storage applications.  A comparison with other NV storage and memory technologies will be discussed.

20140909scv

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