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July 23, 2008

Mtg: Current Status and Future Outlook of STT-RAM Technology

by @ 6:36 pm. Filed under ALL, Communications, Computers/Software, NanoEngineering, Semiconductors
 

TUESDAY August 12, 2008
SCV Electron Devices Chapter
Speaker: Dr. Yiming Huai, Grandis Inc.
Time: Pizza at 6:00 PM; Presentation at 6:15 PM
Cost: none
Place: National Semiconductor, Building E-1, Conference Center, 2900 Semiconductor Drive, Santa Clara
RSVP: not required
Web: www.ewh.ieee.org/r6/scv/eds

STT-RAM (spin-transfer torque memory) is a revolutionary new memory technology derived from Grandisâ?? pioneering research in Spintronics, that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM, the non-volatility of Flash, and essentially unlimited endurance. ? It has superior write selectivity, excellent scalability beyond the 32 nm technology node, low power consumption, and a simpler architecture and manufacturing process than first-generation MRAM. In this presentation, we will review the current status of STT-RAM technology and device; discuss key challenges, and future potential applications and products.

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