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July 13, 2015

Gallium Nitride: A New Platform for Sensing Technology

by @ 4:02 pm. Filed under ALL, BioEngineering, Electronics Design, NanoEngineering, Semiconductors
 

Wednesday, July 22, 2015 
SFBA MEMS and Sensors 
Subject: Gallium Nitride: A New Platform for Sensing Technology 
– high electron mobility transistors (HEMTs), a multitude of devices can be microfabricated, micro- and nano-scale devices to extreme harsh environments … 
Speaker: Prof. Debbie Senesky, Stanford University 
Time: 6 pm: Networking, pizza & drinks, 7 to 8 pm: Presentation 
Cost: Pizza and beverages will be available starting at 6:00 pm for a donation at the door 
Location: Texas Instruments Building E Conference Center, 2900 Semiconductor Dr., Santa Clara 
Event Details: http://sites.ieee.org/scv-mems/meetings/

20150722ALL

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