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August 30, 2016

CPI Stress Induced Carrier Mobility Shift in Advanced Silicon Nodes

by @ 10:26 pm. Filed under ALL, Electronics Design, Reliability, Semiconductors
 

Thursday, November 3, 2016
SCV Reliability Chapter, Electron Device Society (EDS), and Components, Packaging, and Manufacturing Technologies (CPMT) 
Subject: CPI Stress Induced Carrier Mobility Shift in Advanced Silicon Nodes
– mechanical stress and the consequent effects on device performance for advanced three-dimensional (3-D) IC technologies …
Speaker: Valeriy Sukharev, Technical Lead, Design to Silicon Division (Calibre) of Mentor Graphics Corporation
Time: 6:00 to 6:30 pm: Sign in, snacks and social; 6:30 to 7:30 pm: Presentation; 7:30 to 8:00 pm: Question and Answer Session
Cost: Free
Location: Qualcomm, Inc., 3165 Kifer Road, Santa Clara, in the cafeteria
Event Details: http://ewh.ieee.org/r6/scv/rl/
Please register so as to know how much food to purchase: https://www.eventbrite.com/e/cpi-stress-induced-carrier-mobility-shift-in-advanced-silicon-nodes-tickets-27427049042
Food sponsored by I.C.E. Labs, ISO 9001 & 17025 Reliability Test Lab, www.icenginc.com

20161103ALL

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