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January 30, 2017

STT-MRAM: Spin Torque Transfer Magneto-Resistive Random Access Memory  –

by @ 6:28 pm. Filed under ALL, NanoEngineering
 

Tuesday, March 21, 2017 
SFBA Nanotechnology Council 
Subject: STT-MRAM: Spin Torque Transfer Magneto-Resistive Random Access Memory 
may replace present day DRAM; faster, denser, lower power, non-volatile…

Speaker: Barry Hoberman, Chairman & CEO, Spin Transfer Technologies 
Time: 11:30 am: Registration, networking, pizza, and drinks; 12:00 noon to 1:00 pm: Presentation
Cost: $5 donation for lunch 
Location: Texas Instruments, Building E Conference Center, 2900 Semiconductor Dr., Santa Clara 

Event Details: https://sfbananomarch2017.eventbrite.com

20170321ALL

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