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December 29, 2008

Mtg: The Basic Electronic Components: Finding the Missing Memristor

by @ 4:24 pm. Filed under ALL, Communications, Computers/Software, Electronics Design, Engineering Mgmt, NanoEngineering, Semiconductors
 

WEDNESDAY February 11, 2009
SCV Components, Packaging & Manufacturing Technology Chapter, with the Nanotechnology Council
Speaker: Stanley Williams, Director, Information and Quantum Systems Laboratory, HP Laboratories
Time: Optional dinner at 6:30 PM; Presentation at 7:30 PM
Cost: $25 if reserved by Feb 2; $30 before Feb. 6, $40 at door (no cost for presentation)
Place: Biltmore Hotel, 2151 Laurelwood Rd (Fwy 101 at Montague Expressway), Santa Clara
RSVP: on the website, or by email to Janis Karklins, karklins@ieee.org
Web: www.cpmt.org/scv

The existence of a fourth passive circuit element was proposed by Prof. Leon Chua of UC Berkeley in 1971 from fundamental symmetry arguments unifying resistance, inductance and capacitance equations. Although he showed that such a â??memristorâ?? had many interesting and useful circuit properties, until this year no one had presented a physical model nor material example of such an element.? In fact, memristance arises naturally in systems for which electronic and atomic transport are coupled under an external bias voltage.? A simple analytical model shows that the nonlinear term that determines the magnitude of memristance is inversely proportional to the square of the thickness of the active device, and demonstrates that such nonlinear behavior is much more important and prevalent for electronic devices with nanoscale dimensions.? These results serve as the foundation for understanding a wide range of hysteretic current-voltage behavior observed over the past 50 years in many electronic devices that involve the motion of atoms, vacancies or molecular components.? We have built nanoscale titanium dioxide memristors in our laboratory and have demonstrated many of their electrical prop-erties and potential uses, including new forms of logic circuits. These devices can rather easily be integrated into elec-tronic circuits using conventional materials available in standard CMOS fabrication facilities.

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