GaN-on-Silicon RF Power Devices
- Current State & Future Directions
Dr. Kevin Linthicum
Date: Thursday, September 20, 2007
Time: Lecture 7:00 pm, Reception 5:30 pm, Dinner 6:00-7:00 pm
Place: American Center for Physics, College Park MD directions
Cost: Lecture free.
This is the first lecture in the MTT-S Lecture Series for 2007-08. All are welcome to attend the reception and the catered dinner with the speaker before the lecture. Dinner reservations are required, cost $15.00. RSVP for dinner only by Tuesday September 18 to Roger Kaul, 301-394-4775, email@example.com.
Abstract: A GaN-on-silicon platform technology has been developed to provide the performance advantages of GaN combined with the manufacturing advantages of silicon. The Nitronex process technology has been formally qualified for 28V operation and released for production. Extensive reliability studies have been performed yielding demonstrated EA=2.0eV predicting an MTTF of 10E7 hours at 200 C junction temperatures. The process technology is currently undergoing 48V qualification and will support the production release of a family of high power transistors for WiMAX, Cellular and Broadband market applications.
Bio: Dr. Kevin Linthicum is the founder and Chief Technology Officer of Nitronex Corporation, a NCSU start-up incorporated in 1999. Kevin is responsible for the materials, process and product engineering activities at Nitronex. Prior to forming Nitronex, Kevin completed his Ph.D. in Materials Science & Engineering under the direction of Professor Robert F. Davis focusing on the growth of Gallium Nitride using MBE and MOCVD. Dr. Linthicum earned his B.S. in Materials Science & Engineering at Virginia Tech in 1993. Prior to pursuing his academic studies, Kevin served in the U.S. Naval Trident Submarine Force from 1980-1988 in the Nuclear Engineering Department.