IEEE Gainesville Section and Department of Electrical and Computer Engineering presents Low Frequency Noise Characterization of Advanced Semiconductor Materials and Devices Cor Claeys, Head of research group on Radiation Effects, Cryogenic Electronics and Noise Studies, IMEC (Interuniversity MicroElectronics Center), Belgium President-elect of IEEE Electron Devices Society DAY/DATE: Thursday, February 23, 2006 TIME: 12:50 PM - 1:40 PM LOCATION: 202 New Engineering Building, Center Drive, University of Florida SUMMARY This lecture first outlines the different types of low frequency noise occurring in deep submicron silicon MOSFETs and their use as an analytical tool. The noise sources comprise white noise, Generation- Recombination (GR) noise, Random Telegraph Signal (RTS) fluctuations and 1/f or flicker noise. The fundamental basis of each noise type will be briefly described and illustrated by some practical examples. In a second part, the impact of the properties of the silicon substrate (orientation, crystallization technique, SOI, SiGe) on the noise performance is discussed. Finally, the impact on the low- frequency (LF) noise behavior of different advanced process modules, such as gate stack (thermal SiO2, nitrided oxides, high-k materials, metal gates), device isolation (LOCOS and STI based), silicidation, and gate engineering is illustrated. Some state of the art processing such as e.g. FUSI and strained SiGe layers will also be discussed. BIOGRAPHY of Cor Claeys Cor Claeys was born in Antwerp, Belgium. He received the electrical- mechanical engineering degree in 1974 and the Ph.D. degree in 1979, both from the Katholieke Universiteit Leuven (KU Leuven), Belgium. From 1974 to 1984 he was a Research Assistant and Staff Member, respectively, of the ESAT Laboratory of the KU Leuven and since 1990, a Professor. In 1984, he joined IMEC as Head of Silicon Processing Group. Since 1990 he is Head of the research group on Radiation Effects, Cryogenic Electronics and Noise Studies. He is also responsible for Technology Business Development. His main interests are in general silicon technology for ULSI, device physics, including low-temperature operation, low frequency noise phenomena and radiation effects, and defect engineering and material characterization. He coedited a book ìLow Temperature Electronicsî and wrote a book ìRadiation Effects in Advanced Semiconductor Materials and Devicesî. He also authored and co-authored six book chapters and more than 600 technical papers and conference contributions related to the above fields. He is an associated Editor for the Journal of the Electrochemical Society. Dr. Claeys is a member of the European Material Research Society, a Senior Member of IEEE and a Fellow of the Electrochemical Society. He was the founder of the IEEE Electron Devices Benelux Chapter, was Benelux Section Chair, was lected AdCom member of the Electron Devices Society (1999-2005), and is presently Vice-President for EDS Chapters and Regions. Recently, he has elected as President-Elect of the IEEE EDS Society. He also received in 2000 the IEEE Third Millennium Medal. In 1999 he was elected as Academician and Professor of the International Information Academy. In 2004 he received the Electronics Division Award of the Electrochemical Society.