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Date: October 22, 2009
Time: 6:00-7:30pm - Seminar
Location: Sematech (view map)
Room F-C
Topic: Oxide-Semiconductor Heterostructures: Challenges and Opportunities
Description: In this presentation, the materials research capabilities at Texas State University will be outlined followed by the challenges in the deposition of epitaxial oxides on semiconductors and the steps necessary to control growth kinetics and its effects on the oxide/semiconductor interfacial properties. Some of the applications for the integration of functional oxides on semiconductors will also be discussed.
Speaker: Professor Ravi Droopad
Speaker Bio: Ravi Droopad joined Texas State University in 2008 as a professor after spending 13 years at Mororola Labs/Freescale semiconductors developing novel materials for future devices applications. He obtained his PhD in Semiconductor Physics from Imperial College, London. After a stint as a Research Scientist at Arizona State University, he joined Motorola Labs where he developed growth processes for PHEMT and EMODE type devices for power amplifiers. He has led a team to develop multifunctional oxides on semiconductors including oxides on silicon as a high k dielectric replacement for SiO2 in Si CMOS devices and GaAs on oxide on silicon technology. More recently his work on oxides on III-V semiconductors has led to the successful demonstration of Fermi level unpinning on GaAs and the realization of high performance enhancement mode III-V MOSFET devices. In 2002 he was elected to the Motorola’s Scientific Advisory Board Associates for his contributions to materials research. In 2006 he received the IEEE Phoenix section engineer of the year award. He currently has 39 issued patents and has published over 140 refereed papers in scientific journals.

   
           

© 2006 IEEE Electron Device Chapter, Central Texas Section
Direct questions or comments to Thuy Dao.