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Charge: Mandatory $10 for all members and $15 for non-IEEE members, includes admission and buffet (but NOT beverage).

RSVP: If attending, please RSVP to rsanthakumar@tqs.com by noon, Jan. 24, for restaurant headcount.

Abstract: In microwave power amplifier design the ability to produce high output power density with high DC to RF conversion efficiency are important figures of merit. Higher power added efficiency (PAE) results in less DC consumption and reduced heat generation by the circuit. The switch-mode amplifier family in particular has recently gained a great deal of interest for high efficiency power amplifier applications. In this presentation, a survey of the high efficiency techniques used for microwave power amplifier design with an emphasis on the efficiency and power performance and the frequency limitations of the class E and class F switch-mode power amplifier topologies will be presented. Comparison is made between the gain, output power and efficiency performance of each topology for the ideal circuit and for the circuits in the presence of the major parasitics such as the on-resistance, the loss in the matching networks and the breakdown voltage. Next the frequency limitations of the two topologies due to the major device and circuit parasitic elements is studied, and the effect of the device size and scaling of the HEMTs with respect to the gate width and the gate length on the power and frequency performance of each topology is qualitatively discussed.

Speaker Biography: Dr. Valiallah Zomorrodian received the B.S. and M.S degree in electrical and computer engineering from University of Houston, Houston, TX, in 2000 and 2004, respectively and his Ph.D. degree in electrical and computer engineering from the University of California Santa Barbara (UCSB) in 2011. His research interests include large signal and noise modeling of AlGaN/GaN HEMTs and design and fabrication of nonlinear Monolithic Microwave Integrated Circuits (MMICs) using AlGaN/GaN HEMT technology. He is currently working as a design engineer at TriQuint Semiconductor in Richardson, TX.