Patrick Drennan 
Patrick Drennan is Chief Technology Officer of Solido Design Automation, Inc. Prior to joining Solido, Patrick was a Distinguished Member of the Technical Staff at Freescale Semiconductor (formerly Motorola, Inc.). Patrick was one of the creators of the backwards propagation of variance (BPV) method for statistical characterization. This model guarantees consistency between simulation and silicon measurement and it is valid for all biases and geometries, which are significant attributes for design. His mismatch (local variation) model earned the Best Regular paper at the 2002 IEEE Custom Integrated Circuit Conference. He was the first to describe the impact of shallow trench isolation (STI) and well proximity effect (WPE) on design, demonstrating that the WPE produces a graded channel MOSFET. More importantly, he showed the catastrophic impact these unforeseen phenomena can have on circuit design. For this work, he received the Best Invited Paper at the 2006 IEEE Custom Integrated Circuit Conference. Patrick has extensive experience in measurement, modeling, characterization, test structure generation and design application of systematic and stochastic semiconductor variations. Patrick received the B.S. degree in microelectronic engineering and M.S. degree in electrical engineering from Rochester Institute of Technology and the Ph.D. degree in electrical engineering from Arizona State University.