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Electron Devices Society
Santa Clara Valley Chapter http://www.ewh.ieee.org/r6/scv/eds/ |
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The field of interest of the IEEE EDS is all aspects of the physics, theory,
and phenomena of electron and ion devices, such as elemental and compound
semiconductor devices, quantum effect devices, optical devices, tubes and
other vacuum devices. Please Post and Circulate within your Company. |
June 1, 2006 |
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For an online version of this announcement with active links, please visit http://www.ewh.ieee.org/r6/scv/eds/announcements/ieee-scv-eds-20060601.html |
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June 13th Meeting
Dr. Sunil Shabde - Silicon Analytics "CMOS Device Reliability Overview" |
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Other IEEE Events
UGIM Symposium at San Jose State - June 25–28, 2006 |
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Upcoming IEEE SCV EDS Evening Meeting:
June 13, 2006 IEEE SCV EDS Meeting:
Abstract: With continuous scaling down of the CMOS technology, several device reliability issues have arisen, such as hot carrier degradation (HCI), gate oxide reliability issues (TDDB, QBD) and electro-migration (EM). This talk will present an overview of the degradation phenomena, the underlying physics, commonly used models and lifetime evaluation methodologies, with a focus on device issues. As the technology scales further below 0.18 microns, band-to-band tunneling becomes significant due to thinning of the gate oxides. Gate leakage increases exponentially and becomes detrimental to products. New reliability issues such as NBTI, PBTI, TDDB and the soft breakdown of ultra thin-oxides arise. Impact of Hi–K gate dielectrics on reliability also becomes a significant issue. An overview of these emerging reliability effects will be given and the physics behind them will be explained. Interestingly, it will be briefly pointed out that with continued scaling there is a certain continuity as well as a merging of some of these degradation mechanisms. |
Upcoming IEEE SCV EDS Evening Meeting:
Biography: He has over 25 years of experience as a senior technologist and manager in companies ranging from start-ups to large corporations. His contributions are in CMOS technology development including process development, device physics, yield improvement, process qualification and reliability issues. At AMD, Signetics/Philips and AMI he worked on process integration, device characterization and process transfers. His experience also includes managing foundry interfaces at companies such as QSI, Amkor and high-voltage device development at IMP. At AMD, he did CMOS device reliability evaluations for qualifying an 0.25 micron logic technology. He was granted three patents while at AMD. Dr. Shabde has former academic experience as a faculty member at the University of Michigan, Ann Arbor where he set up an integrated circuits laboratory. He has also taught evening courses on CMOS technology and wafer level reliability at the UC Extension, Santa Cruz. He has published 16 papers in the area of device physics and reliability issues in various technical journals such as the IEEE Transactions on Electron Devices (TED) and at the IEEE International Reliability Physics Symposium (IRPS). Dr. Shabde is a Senior Member of the IEEE. Dr. Shabde currently consults with Silicon Analytics and delivers courses on Wafer Level Reliability for Pinnacle Training International Seminars, Inc. He has recently delivered his course on Wafer Level Reliability on-site at companies like Texas Instruments (TI). For more information on his Wafer Level Reliability Course |
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Upcoming IEEE EDS UGIM Microelectronics Symposium: San Jose State University: June 25 – June 28, 2006
"16th Biennial University/Government/Industry Microelectronics Symposium"
Abstract of Symposium: Representatives of university fabrication labs, ranging from new start-up labs to nationally recognized facilities, have found this symposium an excellent forum for exchanging information. Government agencies such as NSF, NIH, NIST, SEMATECH, SRC, DARPA and ONR regularly participate with papers and updates on funding opportunities. Industry interactions with universities, including technology transfer, collaborative research, and training efforts are frequently presented. |
Upcoming IEEE EDS UGIM Microelectronics Symposium: San Jose State University: June 25 – June 28, 2006 Scope of Symposium:
For more information on the 2006 UGIM Symposium For more information on the 2006 UGIM Symposium Location For more information on the 2006 UGIM Symposium Registration |
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The IEEE SCV EDS Email Distribution List: How to Subscribe/Unsubscribe Subscribe to the IEEE SCV EDS Email Distribution List to UNSUBSCRIBE: unsubscribe eds-chap-scv Your email address is automatically captured by LISTSERV. To unsubscribe, it must agree exactly with the email address you used to subscribe to the Dlist. Use a two-step procedure to change from an old to a new email address. First, send an unsubscribe message using your old email address. Second, re-subscribe to the IEEE SCV EDS Dlist by sending a subscribe message using your new email address. Send email to the IEEE SCV EDS Dlist Administrator if you no longer have access to an old email address that you would like to delete so we can keep the IEEE SCV EDS Dlist database current. Go to the IEEE SCV EDS Dlist URL for more information about how to use our email distribution list. Email the IEEE SCV EDS Dlist Administrator for assistance with special cases. Visit the IEEE SCV Electron Devices Society Website Visit the IEEE SCV EDS Website at http://www.ewh.ieee.org/r6/scv/eds/ the first week of each month for more details about the IEEE SCV Electron Devices Society's upcoming monthly events, as well as the speaker slide sets for the IEEE SCV EDS past events.
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