| Organizer: IEEE Solid-State Circuits Society | |
| Title: SOI CMOS Circuits for Low-Voltage VLSI
| |
| Speaker: Prof. James B. Kuo IEEE Fellow and Canada Research Chair Professor Dept. of Electrical and Computer Engineering U. of Waterloo |
| Time and Location: Friday, Nov 2nd, 2001 5-6pm SF1105 (blue room), Sanford Fleming Bldg. 10 King's College Circle. Refreshments will be served. All are welcome! | |
| Abstract: This talk addresses devices and circuits of SOI CMOS VLSI technology, which is becoming another major technology for integrating low-power low-voltage VLSI systems in the 21st century. Starting from the various device structures available in SOI CMOS technology, equivalent circuit models of partially-depleted (PD) SOI CMOS devices, which are made of modified MOS and bipolar compact charge-control models suitable for SPICE simulation of VLSI circuits made of SOI devices, are described to explain the floating body effects including the DC kink effects in the strong inversion and subthreshold regions, the transient drain-current overshoot, and the bias-dependent time constant in reaching equilibrium. In the final portion of this speech, low-voltage Dynamic Threshold MOS (DTMOS) techniques for PD SOI CMOS technology are explained. Most of the contents of this talk are from Dr. Kuo's new textbook on Low-Voltage SOI CMOS VLSI Circuits and Devices published by John Wiley, New York, (ISBN 0471417777) in Sept 2001. |
| Biography: Prof. James B. Kuo (F'99) received the BSEE degree
from National Taiwan University, Taipei, Taiwan, in 1977, the MSEE degree from The Ohio
State University, Columbia, in 1978, and the PhDEE degree from Standford University,
Standford, CA, in 1985. >From 1985 to 1987, he was a Research Associate with the IC Lab
of Standford University. He joined National Taiwan University (NTU) as an Associate
Professor in 1987. He became a Professor at NTU in 1990. In 2000, he joined the University
of Waterloo, ON, Canada, as a Professor. His research expertise is in the field of
low-voltage CMOS VLSI circuits and SPICE compact modeling of bulk and SOI CMOS and BiCMOS
VLSI devices. He serves as a member of the international advisory board of the IEEE
Circuits and Devices Magazine. He is the chair of the membership committee for the IEEE
Electron Devices Society, of which he is a distinguished lecturer. He has published over
100 international journal papers and authored eight books, including Low-Voltage CMOS VLSI
Circuits (New York: Wiley, 1999) and CMOS VLSI Engineering: Silison-On-Insulator - SOI
(Boston, MA: Kluwer, 1998).
Prof. Kuo's last three books : - James B. Kuo and Shih-Chia Lin, Low-Voltage SOI CMOS VLSI Devices and Circuits, New York: Wiley Interscience, 2001, ISBN 0-471-41777-7. - James B. Kuo and Jea-Hong Lou, "Low-Voltage CMOS VLSI Circuits," 439 pages, John Wiley Interscience, New York, ISBN 0471321052, 1999. - James B. Kuo and Ker-Wei Su, "CMOS VLSI Engineeing: Silicon-On-Insulator (SOI)," 422 pages, Kluwer Academic Publisher, ISBN 0792382722, 1998. You can download presentation slides here. |
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