Seminar Announcement
These events are organized by various sub-sets of the IEEE Toronto Section.
The contact person listed below is the volunteer who has arranged this event.
Please use the e-mail link provided if you have any questions, suggestions,
or concerns.
| Titles
|
Design Considerations in New Generation of Power Semiconductor Devices
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| Speaker
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Dr. Tatsuhiko Fujihira
Directing Manager of Electron Device Laboratory
Fuji Electric Device Technology Co., Ltd.
|
| Day and Time
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Tuesday, September 4, 2007, 2:00 p.m. – 3:00 p.m.
|
| Location
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Room BA B024 (basement)
Bahen Centre
for Information Technology
University of Toronto - St. George Campus
40 St. George Street map - code BA |
| Organizer
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Solid-State Circuits Chapter |
| Contact
|
Dustin Dunwell, E-mail:
|
| Abstract
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- Introduction of Fuji Electric Device Technology
- Design Considerations in HV Power MOSFET. Important design considerations in new
generation of high-voltage power MOSFET are presented. On-resistance, Qgd,
breakdown voltage, ruggedness, and noise emission are treated.
- Design Considerations in 6th Generation IGBT. Important design considerations in new
generation of IGBT are presented. On-state voltage, switching loss, breakdown voltage,
ruggedness, and noise emission are treated.
|
| Biography
|
Dr. Tatsuhiko Fujihira is the Directing Manager of Electron Device Laboratory, Fuji Electric
Device Technology Co., Ltd. Dr. Fujihira received his bachelor and master degrees from
Tokyo University in 1982 and 1984 respectively. He joined Fuji Electric in 1985 to engage in
R&D of power semiconductor devices. In 1995, he became the manager of power MOSFET
and IGBT chip design. In 1998, Dr. Fujihira obtained his doctoral degree from Yamanashi
University. Since then, Dr. Fujihira held many important positions, including the Director of
Fuji Hitachi Power Semiconductor in 2000, the General Manager of Automotive Product
Development Dept, Fuji Electric Device Technology in 2003, the Vice-Directing Manager of
Semiconductor Factory in 2004, and the Directing Manager of Semiconductor Technology
Development Division in 2006. Dr. Fujihira became the Directing Manager of Electron
Device Laboratory in 2007.
Dr. Fujihira also holds numerous prestigious awards. These include the Invention
Encouragement Award from Japan Institute of Invention and Innovation (Vertical power
MOSFET, 1999), the President Award from Fuji Electric (Vertical power IC technology,
2000), the President Award from Fuji Electric (Super-junction patents, 2000), and the OHM
Technology Award form The Promotion Foundation for Electrical Science and Engineering
(vertical power MOSFET, 2002).
Dr. Fujihira has more than twenty years of experience in power semiconductor technology;
research, development, product design, yield control, and process quality control. He has
more than one hundred patents and more than twenty technical papers on power
semiconductor devices including the first technical paper on super-junction device.
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