Professor Yung C. Liang
National University of Singapore
| Organizer: IEEE Solid-State Circuits Society |
| Title: Superjunction Power MOSFET Device
Research |
| Speaker: Professor Yung C. Liang National University of Singapore |
| Abstract: The seminar gives a technical description on the research activities on development of superjunction (SJ) power MOSFET devices at the National University of Singapore. Superjunction power MOSFET provides a better performance merit to function at a higher breakdown voltage and a lower on-state resistance, in comparison to the conventional power MOSFET. The basic concept on superjunction and two recently developed structures, namely the poly-flanked SJ MOSFET and the oxide-bypassed MOSFET will be described in detail, including the fabrication processes and their laboratory measurement results. The results show that the device Ron-VBR (on-state specific resistance versus off-state breakdown voltage) performances have broken the conventional MOSFET silicon limit. |
| Biography: Yung C. Liang is an associate professor at the National University of Singapore, Singapore. He received the Ph.D. degree in electrical engineering from the University of Sydney, Australia in 1991. His research interest is on power microelectronic devices and microsystem technology. He has authored and co-authored more than 80 technical publications in the said area. He was affiliated with the Japan Advanced Institute of Science and Technology in 1997 and the University of California, Berkeley between 2001 and 2002 as a visiting academic. He is the recipient of the IEEE Transactions Paper Prize from the Power Electronics Society in year 2000 and the IEEE Third Millennium Medal. |
| Time and Location: Thursday, October 3, 2002 5:00 - 6:00 pm. Room 252, Mechanical Engineering Building, 5 King's College Rd., University of Toronto Refreshments will be served. All are welcome! |
The Institute of Electrical and Electronics Engineers,
Toronto Section
E-mail sec.toronto@ieee.org
Send comments to tor.sect@tor.ieee.org