TUTORIAL T6: ADVANCED NON- VOLATILE MEMORIES AND THEIR RELIABILITY

Speaker: Guoqiao Tao NXP, Netherlands

Biography of Speaker:

Tao, Guoqiao was born in 1963 in Jiangsu, China. He graduated with B.Sc degree in Semiconductor Physics in 1982from Nanjing University, China. He received M.Sc. and Ph.D. degree in Electrical Engineering in 1990 and 1994, both from Delft University of Technology, the Netherlands. He has worked on various subjects in the semiconductor field: discrete devices, bipolar ICs, surface acoustic wave devices, solar cells, and embedded non-volatile memories. He is with NXP semiconductors, and a senior principal and domain leader in the area of non-volatile memory devices and reliability. He invented the 2T-FNFN-NOR device and has published numerous papers on NVM device and reliability. He has been a TPSC member of IPFA for several years. He chaired the memory reliability sessions at IRPS 2003 through 2005. He is the TPC chair of IIRW 2008 and general chair of IIRW 2009. Dr. Tao is a senior member of the IEEE.