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January 29, 2015  Modeling in Power Electronics - Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes
Speaker: Dr. Tanya K. Gachovska, Solantro Semiconductor Corp., Ottawa, Ontario, Canada
Thursday, January 29, 2015
TIME: Refreshments, Registration and Networking: 
06:30 p.m.; IEEE ComSoc Distinguished Lecture: 07:00 p.m.  08:00 p.m.
PLACE: Algonquin College, 1385 Woodroffe Ave., School of Advanced Technology, Building-T, Optophotonics Lab (Room T129) 
PARKING: No fee after 5:00 p.m. at the Visitors’ Parking Lots 8 & 9. Please respect restricted areas.
ADMISSION: Free. Registration required. To ensure a seat, please register by e-mail contacting: Raed Abdullah raedabdullah@ieee.org or Wahab Almuhtadi almuhtadi@ieee.org.
MORE INFO: Ottawa PES Chapter website


Obtaining high efficiency of a power converter requires use of well chosen components to build it. Power semiconductor switches are responsible for significant power losses. For the same breakdown voltage, silicon carbide (SiC) bipolar devices have significantly thinner, lightly doped drift region (n-base) compared to silicon (Si) devices. Consequently, SiC bipolar devices have lower voltage drops in the drift region and lower switching losses. The reduction of power loses is important for power electronics applications in Smart Grids, higher voltages and higher switching efficiencies in switchgear and custom power systems/devices (in Distribution Systems for Medium Voltage levels and in Distributed Energy Resources such as solar, wind, and energy storage systems), EPRI Solid-State Intelligent Universal Transformer, etc. The forward voltage drops of bipolar devices are the sum of the drift region voltage drop and the junction voltages. The junction voltages of Si devices are significantly smaller as compared to a SiC device since their band gap is smaller. Therefore, for lower voltage devices (< 6.5 kV), the forward voltage drops are smaller for Si as compared to SiC devices. For high voltage devices, the opposite is true. In this seminar, physics-based models of Si and SiC diodes will be presented and used to calculate the forward voltage drop for different breakdown voltages and the simulation results are compared to determine the appropriate choice of Si and SiC devices based on their breakdown voltage. The instrumentation and measurements for obtaining the experimental data for modeling will be discussed

Oluwadara Fagbohun, Wahab Almuhtadi or Abdul Al-Azzawi.

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