N2C3  Semiconductor Detectors 1

Tuesday, Nov. 3  14:00-16:00  Golden West

Session Chair:  Lothar Strueder, PNSensor, Germany; Paul Barton, Lawrence Berkeley National Laboratory, United States

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(14:00) N2C3-1, Detector Development at the Paul-Scherrer-Institute (PSI)

D. Greiffenberg, A. Bergamaschi, M. Brückner, S. F. Cartier, R. Dinapoli, D. Maliakal, D. Mezza, A. Mozzanica, M. Ramilli, C. Ruder, B. Schmitt, X. Shi, L. Schädler, J. H. Smith, G. Tinti

Paul-Scherrer-Institut (PSI), Viliigen PSI, Switzerland
The Detector Group of the Swiss-Light-Source (SLS) at the Paul Scherrer Institute (PSI) has a long history of developing detectors. The first detectors have all been operating in single photon counting mode. This technique is very effective if used at a synchrotron, where single photons come in sequentially in time. At XFELs the photons arrive simultaneously at the sensor and it not possible anymore to count single photons. Therefore the SLS detector group has started a dedicated development program for charge integrating (CI) detectors. The number of impinging photons is determined by measuring the total charge and divided it by the known charge generated by a single photon. The gain of each pixel can be adapted dynamically to the number of incoming photons. In order to ensure the same data quality as single photon counting detectors, the charge integrating readout chips have a noise performance which is better than Poisson statistics at each point of the dynamic range, and retain single photon sensitivity when in high gain. Various CI readout chips featuring dynamic gain switching have been developed to cover the needs of the different foreseen applications. GOTTHARD is a 1-D strip detector with strip pitches down to 50 µm. AGIPD, JUNGFRAU and MÖNCH are our 2-D pixel detectors, having pixel sizes of 200 x 200 µm2, 75 x 75 µm2 and 25 x 25 µm2, respectively. They all provide single photon sensitivity (for at least 10 keV photons) in the high gain stage and, with the exception of MÖNCH, cover a dynamic range of up to 104 x 12 keV photons. This presentation will focus on the newly developed CI readout chips JUNGFRAU and MÖNCH. First results of the readout chips, which show very promising performance, will be presented. We will show how to make use of the analog pulse height information of the charge integrating readout chips. One example is the interpolation of the interaction position of a photon in the sensor, which allows to obtain subpixel resolution.

(14:20) N2C3-2, SDD X-Ray Spectrometers with Improved High Energy Response and Counting Rate Performance

Y. J. Wang, S. Barkan, V. Saveliev, L. Feng, Y. Tomimatsu, E. Damron

Hitachi High Tech Science America, Northridge, United States
A state-of-art silicon drift detectors (SDD) with improved hard X-ray quantum efficiency (QE) is integrated with advanced front-end ASIC electronics. SDDs with a sensitive thickness of 1mm double the QE at 20 keV over standard 0.35 mm thick SDD. Equipped with a CMOS charge preamplifier, our new SDD gives superior noise performance at very short shaping times. Output count rate is even higher than 1Mcps at 50 – 60% DT and with the energy resolution better than 190eV with the latest adaptive pulse processing electronics. To even further increase in total count rate capability and detector solid angle, we have developed multi-element SDD spectrometers, such as 4 elements and focused 3 elements.

(14:40) N2C3-3, Induced Signals in Microstrip Detectors for Particle Identification: Simulation and Experimental Qualification

A. Castoldi1,2, C. Guazzoni1,2, T. Parsani1,2, F. Riccio1,2, P. Zambon1,2, L. Carraresi3,4, F. Taccetti4

1Dip. Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, taly
2Sezione di Milano, INFN, Milano, Italy
3Dip. Fisica e Astronomia, Universitą degli Studi di Firenze, Firenze, Italy
4sezione di Firenze, INFN, Firenze, Italy
Silicon microstrips are widely used in nuclear physics experiments when high granularity and high resolution of the detection system is required. In the framework of the construction of a novel Femtoscope Array for Correlation and Spectroscopy, named FARCOS, aiming at the identification in charge and mass even of particles stopping in the first detection layer, we are performing a thorough characterization of the silicon detector layers in terms of the collection properties as a function of the point of incidence. We have experimental evidence – as previously observed also in the literature for other strip detectors – that interstrip incidence alters the signal shape not only for the trivial charge sharing but also because the shape of the induced signal on neighbor strips. In order to clarify this issue we developed a custom simulation suite of the electron-hole transport and signal formation able to properly describe 3-D Coulomb interaction and thermal diffusion in semiconductor detectors. The peculiarity of the simulation suite is the decoupling of the computation of the electrostatic potential in the detector volume from charge transport, thermal diffusion and Coulomb interaction between the carriers. We ran a batch of significant and representative simulations presenting the qualitative correct interpretation and the quantitative validation as proved by the comparison of the simulation results with the experimental data. The presentation will shortly review the results of the qualification of the detector response with ion microbeams and IR pulsed lasers and the basic features of the simulation code. The comparison of the experimental measurement and the results of the simulation that confirm the excellent predictive capability of the developed simulation tool in the design and understanding of the detector response.

(15:00) N2C3-4, New Silicon Drift Detectors and CMOS Readout Electronics for X-Ray Spectroscopy from Room Temperature to Cryogenic Operations

R. Quaglia1,2, A. D. Butt1,2, G. Bellotti1,2, C. Fiorini1,2, G. Ripamonti1,2, F. Schembari1,2, L. Bombelli3, G. Giacomini4, A. Picciotto4, C. Piemonte4, N. Zorzi4

1Dip. Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, Italy
2INFN sez. Milano, Milan, Italy
3XGLab srl, Milan, Italy
4Fondazione Bruno Kessler - FBK, Trento, Italy
In this work we present new developments of Silicon Drift Detectors (SDDs) and low noise CMOS read-out electronics for a possible use in different X-ray spectroscopy applications, from nuclear physics experiments, to detection systems at synchrotron light sources, to XRF (X-Ray Fluorescence) instrumentation. The detectors can be operated in different working conditions, from room temperature, avoiding a complex cooling apparatus, to cryogenic temperatures, as foreseen in nuclear physics experiments. In particular, SDD detectors developed by our collaboration and manufactured by Fondazione Bruno Kessler (FBK), will be used in INFN experiments SIDDHARTA and ARDESIA. Recently FBK has improved its technology in terms of minimization of the leakage current. This improvement allows to obtain relevant X-ray spectroscopy performance with small area SDDs operated close or even at room temperature. This feature well copes with the excellent noise performances of CUBE preamplifier at short shaping times, where the noise contribution of the leakage current has a lower impact. For instance, at +21 ?C, with a small area SDD (10mm2) an energy resolution of 135.5 eV has been measured at the Mn-Kα line with 0.375 μs shaping time. This kind of results opens the perspective to high resolution X-ray spectroscopy with SDDs with very high count rates at room temperature.

(15:20) N2C3-5, dSiMPl - SiPMs with Bulk Integrated Quench Resistors for Particle Detection

J. Ninkovic1, L. Andricek1, I. Diehl2, K. Hansen2, C. Jendrysik1, K. Kruger2, S. Petrovics1, R. Richter1, F. Schopper1, F. Sefkow2, C. Reckleben1

1MPG Halbleiterlabor, Munich, Germany
2DESY, Hamburg, Germany
We have proposed and demonstrated functionality of a new concept for SiPMs in which the quench resistor is integrated into a bulk underneath the sensitive region (SiMPl concept). Our technology offers the possibility for the construction of pixel tracking detectors with large fill factors, excellent time resolution and low power dissipation using 3D integration technologies to add a signal processing layer to the SiPM matrix. Such devices are of high interest for future lepton colliders, and will also be applicable in other environments. As the active quenching circuit can be fitted into the ASICs attached to the sensor, the value of the bulk resistor has to be optimized for this application. In order to further reduce contributions from dark count rates and after-pulsing as well as from inter-pixel cross talk, it is planned to operate those devices under small overbias. In order to evaluate the detection efficiency in such operation mode a dedicated test setup was developed and the efficiency was measures for the series of small overbias voltages. Results will be discussed.

(15:40) N2C3-6, Optimization of Low-Resistance Strip Sensors Process and Studies of Radiation Resistance

M. Ullan1, V. Benitez1, D. Quirion1, M. Zabala1, J. Montserrat1, M. Lozano1, V. Fadeyev2, D. L. Hibbard2, T. Terhune2, A. A. Grillo2, H. Sadrozinski2

1Centro Nacional de Microelectronica (CNM-CSIC), Barcelona, Spain
2Santa Cruz Institute for Particle Physics (SCIPP-UCSC), Santa Cruz, CA, USA
A further development of a new technological solution to improve the beam-loss protection of silicon strip sensors used in large High Energy Physics experiments is presented. In the current ATLAS-SCT, sensors have Punch-Through protection (PTP) structures included to develop low impedance from the strip to the bias ring in case large voltages exceed some threshold that could damage the strip coupling capacitance. Previous studies show that the high strip resistance limits the beneficial effect of full PTP structures to the area near the structures. In our approach, we extended the PTP protection to the full active area of the sensor by lowering the strip resistance. This is achieved by the addition of a low-resistivity layer connected along the whole strip implant. We have previously demonstrated that such sensors performed as expected, and that other sensor performance factors are not compromised due to the technological modification. The current studies are focused on two aspects of practical application: manufacturability of the sensors with high yield, and their radiation tolerance. To that extend we have made devices with alternative methods of making low-resistivity layers that with better technological performance, and we have irradiated them with protons in the range expected for upgraded ATLAS strips system. We will present studies of the modified sensors and their tolerance to the radiation.