Development of Conductive Buffer Architectures Based on IBAD-TiN

R. Hühne, K. Güth, R. Kaltofen, T. Thersleff,
L. Schultz, B. Holzapfel, E.J.Rowley, V. Matias

Abstract — Cube textured IBAD-TiN layers with an in-plane orientation below 10° have been deposited reactively using pulsed laser deposition on polished Hastelloy tapes covered with different amorphous seed layers. Metallic buffer layers such as Au, Pt or Ir were grown epitaxially on top of the TiN layer showing texture values similar to the IBAD layer. Smooth layers were obtained using IBAD-TiN with a double layer of Au/Pt or Au/Ir. Biaxially textured YBCO layers were achieved using Nb-doped SrTiO₃ as a conductive oxide cap layer showing an in-plane alignment of about 7° and a resistively measured superconducting transition at about 88 K. Finally, an amorphous conducting Ta_0.75Ni_0.25 seed layer was tested successfully for the IBAD-process leading to highly textured TiN films.

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