Kaustav Banerjee
Univ. of California, Santa Barbara (UCSB)
Abstract: Two-dimensional (2D) materials such as graphene and various transition metal dichalcogenides possess a wide range of remarkable properties that make them attractive for a number of applications, including sub-10 nm VLSI. In this talk, I will highlight the prospects of 2D materials for building next-generation electronics targeted to support the emerging paradigm of the Internet of Everything. More specifically, I will bring forward a few breakthrough developments on transistors, sensors, interconnects, and passives, all uniquely enabled by 2D materials, which have been realized in my lab to aid ubiquitous connectivity and improve the quality of life.
Biography: Professor Kaustav Banerjee from UC Santa Barbara is one of the world's leading innovators in the field of nanoelectronics. His current research focuses on the physics, technology, and applications of 2D materials for next-generation electronics, photonics, and bioelectronics. Initially trained as a physicist, he graduated from UC Berkeley with a PhD in electrical engineering in 1999. Professor Banerjee is a Fellow of IEEE, American Physical Society (APS), Japan Society for the Promotion of Science (JSPS), and the American Association for the Advancement of Science (AAAS). Professor Banerjee's contributions to energy-efficient electronics, including pioneering work on 3D ICs, have been recognized by IEEE with the 2015 Kiyo Tomiyasu Award, one of the institute's highest honors, as well as the prestigious Bessel Prize in 2011 from the Humboldt Foundation.