Invited Speakers

 

Chee Lip Gan
Professor, Nanyang Technological University, Singapore

Title: Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors

Abstract: Pit formation via electrochemical oxidation has been identified as one of the critical degradation mechanisms in AlGaN/GaN high electron mobility transistors. It is known to be strongly influenced by the electric field, temperature and stressing environment. In this paper, we will extend this understanding to include the role of threading dislocations, current density and the density of the passivation layer.

Biography: Dr Gan is a Professor at the School of Materials Science and Engineering, Nanyang Technological University, Singapore. He is currently the Director of Temasek Laboratories@NTU and Executive Director of Office of Research and Technology in Defence & Security. Prof Gan received his Ph.D in Advanced Materials for Micro- and Nano-Systems under the Singapore-MIT Alliance Program (SMA) in 2003. His research interests include the reliability study of advanced interconnect systems, reliability study of GaN devices and advanced packaging technology for harsh environment electronics. Dr Gan has published over 170 journal and conference publications.

Dr Gan is a Senior Member of IEEE and past General Chair of International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), and past Chairman of IEEE Singapore Reliability/EDS/EPS joint chapter and IPFA Board member.