Invited Speakers

 

Kenichiro Sonoda
Principal Engineer, Renesas Electronics Corporation

Title: TCAD Analysis of Source-Side Injection Program of FinFET Split-Gate MONOS

Abstract: Program characteristics of FinFET split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed using TCAD simulation. Source-side injection (SSI) program is found to be insensitive to the field enhancement at Fin corners in contrast to FN program, which shows the robustness of SSI program of FinFET SG-MONOS to Fin shape variation in the fabrication process. The simulation also indicates that incremental step pulse programming (ISPP) combined with SSI program reduces the field enhancement and improves oxide reliability.

Biography: Kenichiro Sonoda is a Principal Engineer at Renesas Electronics Corporation. He received the B.E., M.E., and Dr.E. degrees in electronic engineering from Osaka University in 1989, 1991, and 1996, respectively. He has been engaged in semiconductor-device modeling and simulation in Mitsubishi Electric Corporation (1991-2003), Renesas Technology Corporation (2003-2010), and Renesas Electronics Corporation (2010-present). He has served as a technical program committee member of IEDM (2008,2009) and SISPAD (2009-2015) and Conference Chair of SISPAD (2017). Dr. Sonoda is a member of the Japan Society of Applied Physics.