Invited Speakers

 

Takeshi Nogami
IBM Research, IBM Corp.

Title: Overview of interconnect technology for 7nm node and beyond

Abstract: New materials and technologies to extend Cu and to enable alternative conductors Abstract: Although alternative conductors such as Co and Ru have intrinsic potentials for higher electromigration reliability than Cu and for competitive resistivity to Cu in fine dimensions, our measured resistivities of Co and Ru interconnects show twice of that of Cu interconnects still in dimension of 5 nm node. Key technologies to extend Cu interconnects to 7nm and beyond are the ALD/PVD modified TaN barrier and the Mn-assisted TaN barrier to achieve required (1) line/via-R, (2) electromigration/TDDB reliability and (3) via chain yield/manufacturability. (Keywords: Cu, interconnect, alternative conductor)

Biography: Takeshi Nogami is Principal Research Staff Member of IBM Research, IBM Corp. working on advanced interconnect technologies in Albany. His recent jobs in IBM include CuMn Seed technology for electromigration reliability improvement (2010), through-Cobalt Self Forming Barrier technology which extends Cu interconnects to 7nm and beyond (2015), CVD-Co liner for Cu gap fill in dual damascene metallization (2008), and Cu/Co Composite metallization (2017). His current focus is Cu and alternative conductors for 7nm and beyond. Prior to joining IBM in 2006, he worked for Sony Corp, AMD Inc, Kawasaki Steel Corp, and Toshiba Corp. He received Bachelor, Master, and Ph.D. degrees from University of Tokyo in chemical engineering. He was Visiting Scholar in Stanford University and University of Tokyo. He was a committee member of IEDM and VLSI Symposia and is currently of IEEE IRDS and SSDM.