Invited Speakers

 

Yuri Yasuda-Masuoka
Samsung Master / Technical VP, Foundry Business, Samsung Electronics Co. Ltd.

Title: Foundry Platform Technology from High-Performance to Low-Power for New High-Performance Computing (HPC) and IoT Era

Abstract: Recent tremendous progress for High-Performance computing (HPC) and plentiful IoT applications have been driving CMOS platform technology development, not only by a conventional scaling, but also by different kinds of optional devices and design choices. Especially for Foundry platform technology, in order to offer suitable solutions to individual applications, wide-range Tr coverage from High performance to Extreme low leakage/power is crucial. In addition to Tr offering, considering a design cost and cycle-time, another key factor is “Extendibility of Technology” with minimum design change effort. In this talk, Samsung Foundry Platform Technology strategy for coming new HPC/IoT era will be introduced.

Biography: Dr. Yuri Y. Masuoka is Samsung Master/Technical VP in Foundry business unit of Samsung Electronics. She received Ph.D. degree in EE from The University of Tokyo. In 2000, she joined NEC corp., where she was engaged in an advanced low-power transistor technology development with high-k gate dielectric/body-biasing scheme. From 2005 to 2006, she was a visiting industrial fellow at University of California at Berkeley, US, where she did research on 1/f noise characteristics of high-k gate dielectric transistor. Since 2006, she joined TSMC, Taiwan, where she developed the first foundry High-k/Metal-gate 28nm high performance device/process. In 2010, she joined Samsung Electronics Co., Ltd., Korea, where she has been working as a team leader for 7nm/11nm/14nm advanced FinFET device development, including a manufacturing yield improvement. She also has served as a committee member of Symposium on VLSI Technology.