Short Course A

 

EUGENE FITZGERALD, MIT, Cambridge, USA

Title: Heterointegration: CMOS + III-V for More than Moore

Abstract: Moore's Law, as characterized by the scaling of device dimensions, is slowing dramatically as it reaches its end, due to both fundamental physical limits as well as economic realities of producing ever smaller transistors on ever larger wafers with sufficient throughput and yield. A new paradigm is needed, and the way forward is to use different semiconductors materials to access their superior electronic and optical properties over Si CMOS. III-V compound semiconductors, with their wide range material parameters, are ideal for pairing with existing Si CMOS process technologies.

In this short course, I will go through the benefits of hetero-integration, after which I will briefly introduce the three main paths for incorporating III-V materials into traditional Si CMOS integrated circuits. These are: i) replacing Si device channel (active) regions with III-Vs; ii) using packaging techniques to create multi-chip solutions; and iii) interconnecting III-V and Si devices at the circuit level to form monolithically integrated Si CMOS + III-V ICs. I will show why the monolithically integrated approaches are the best option for high growth in a More than Moore future, and how market, implementation and technology factors interact to set constraints on industry-viable solutions. I will then provide an overview of the efforts being carried out in this space at the Singapore-MIT Alliance for Research and Technology's Low Energy Electronic Systems (SMART LEES) Interdisciplinary Research Group, and how our work is paving the way towards the integrated circuits of the future.

Biography: Eugene A. Fitzgerald is the Merton C. Flemings-Singapore MIT Alliance Professor of Materials Engineering at the Massachusetts Institute of Technology and Lead Principal Investigator of the Low Energy Electronic Systems (LEES) center of the Singapore-MIT Alliance for Research and Technology (SMART). His research interests are related to new materials, devices, and circuits. His work in lattice-mismatched materials resulted in the discovery of high mobility strained silicon, the basis of the founding of his first company. He and SMART colleagues have recently created New Silicon Corporation in Singapore to commercialize SMART CMOS+III-V technology. He is a practicing researcher, serial innovator and entrepreneur. Prof. Fitzgerald is recipient of the IEEE 2011 Andrew S. Grove Award, the IEEE 2004 EDS George Smith Award, and the 2016 Cornell Distinguished Alumni Award, Department of Materials Science and Engineering. He received a SB degree in Materials Science and Engineering in 1985 from MIT and his PhD in the same discipline from Cornell University in 1989.