Plenary Speakers

Critical Feature Size of Device Manufacturing for Dominating MOSFET Evolutions

Digh Hisamoto
Research & Development Group, Hitachi, Ltd.

Abstract: The evolution of the CMOS device structure has been affected by not only the critical dimension (CD) but also the critical feature size (CFS). In particular, device structures have been dominated by CFS, an index of the improvement in integration at that time. We show that when the structure was changed from planar to FinFET, the thickness of the gate stack became an inevitable CFS factor in addition to the contacts, and this will be more desperate in the post-scaling generation where multiple gates are desired.

Biography: Digh Hisamoto received the B.S., M.S. degrees in reaction chemistry and Ph.D. degree in electronic engineering from the University of Tokyo, Tokyo, Japan, in 1984, 1986, and 2003, respectively.

In 1986, he joined Central Research Laboratory, Hitachi, Ltd., Tokyo, where he has been working on ULSI device physics and process technologies. He developed scaled CMOS devices and memory devices including DELTA (fully depleted lean-channel transistor), the original model of the FinFET. From 1997 to 1998, he was a Visiting Industrial Fellow at the University of California, Berkeley, where he created the first FinFET.
Since 2000, he has developed embedded non-volatile Flash memories using split-gate MONOS charge-trapped technology. Currently, he has expanded the research interests into RF devices, tunnel FETs, wide bandgap semiconductor power devices, quantum sensing devices, and quantum computing devices.

He has served as a committee member of International Conference on Solid State Devices and Materials (SSDM), International Electron Devices Meeting (IEDM) and VLSI Symposia. And also, he served as Director of Japan Applied Physics (JSAP).

Dr. Hisamoto is Fellow of IEEE and JSAP. Currently, he is Chief Senior Scientist, Research and Development Group, Hitachi, Ltd., and assigned to Visiting Professor of School of Engineering, Tokyo Institute of Technology.